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Sony
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Part No. |
SGM2014AM
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OCR Text |
mes FET
Description The SGM2014AM is an N-channel dual gate GaAs mes FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features * Lo... |
Description |
GaAs N-channel Dual Gate mes FET From old datasheet system
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File Size |
47.88K /
5 Page |
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Sony
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Part No. |
SGM2014AN
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OCR Text |
mes FET
Description The SGM2014AN is an N-channel dual gate GaAs mes FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features * Ul... |
Description |
GaAs N-channel Dual Gate mes FET From old datasheet system
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File Size |
53.43K /
5 Page |
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it Online |
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Sony
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Part No. |
SGM2016AN
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OCR Text |
mes FET
Description The SGM2016AN is an N-channel dual-gate GaAs mes FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. F... |
Description |
GaAs N-channel Dual-Gate mes FET From old datasheet system
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File Size |
52.52K /
5 Page |
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it Online |
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Sony
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Part No. |
SGM2016AP SGM2016AM SGM2016AM_AP
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OCR Text |
mes FET
Description The SGM2016AM/AP is an N-channel dual-gate GaAs mes FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers... |
Description |
GaAs N-channel Dual-Gate mes FET From old datasheet system
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File Size |
76.42K /
5 Page |
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METHODE ELECTRONICS INC
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Part No. |
CBA-07-LC-M5-00
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OCR Text |
... c o . , l t d. oth e r n a mes an d trademark s men t i o n e d h e rein ma y be th e tra d emark s of t h eir respec t ive owners. a t t_ 04 -0 1_ en 21/ 0 7 / 2 00 3 optokon c o ., ltd., c e rve n y k r iz 25 0, 5 8... |
Description |
RF/MICROWAVE FIXED ATTENUATOR
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File Size |
156.21K /
2 Page |
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it Online |
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NEC, Corp. NEC Corp. NEC[NEC]
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Part No. |
NE76084 NE76084-SL NE76084-T1 NE76084-T1A
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OCR Text |
mes FET
NE76084
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs mes FET
FEATURES
* Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz * Gate length: Lg = 0.3 m * Gate width : Wg = 280 m
L 1.78 ... |
Description |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs mes FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
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File Size |
61.06K /
12 Page |
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HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO.,LT... HuaXinAn Electronics CO...
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Part No. |
3R90FH 3R150F 3R150FH 3R300F 3R350FH
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OCR Text |
...charge current ( 50hz,1s, 10 ti mes ) capacitan ce (1mhz) v v v g 10 t imes 1 time a pf 3r75f 75 2 0 % < 500 < 600 > 1 10ka 15ka 10 1 3r90f 90 2 0 % < 500 < 600 > 1 10ka 15ka 10 1 3r150f 150 2 0 % < 500 < 600 > 1 10ka 15ka 10 1 3r230... |
Description |
3-Electrode Gas Discharge Tubes
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File Size |
145.94K /
2 Page |
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HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO.,LT... HuaXinAn Electronics CO...
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Part No. |
3R90 3R90CF 3R150 3R150CF 3R350 3R300 3R300CF
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OCR Text |
...charge current ( 50hz,1s, 10 ti mes ) capacitan ce (1mhz) v v v g 10 t imes 1 time a pf 3r75 75 2 0 % < 500 < 600 > 1 10ka 15ka 10 1 3r90 90 2 0 % < 500 < 600 > 1 10ka 15ka 10 1 3r150 150 2 0 % < 500 < 600 > 1 10ka 15ka 10 1 3r230 23... |
Description |
3-Electrode Gas Discharge Tubes
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File Size |
166.10K /
2 Page |
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it Online |
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Price and Availability
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