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TY Semiconductor Co., ltd
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Part No. |
BAR81W
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Description |
Design for use in shunt configuration High shunt signal isolation low shunt insertion loss
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File Size |
58.17K /
1 Page |
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it Online |
Download Datasheet |
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SIEMENS[Siemens Semiconductor Group]
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Part No. |
Q62702-A1145 BAR81
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Description |
From old datasheet system Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation low shunt insertion loss)
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File Size |
46.21K /
3 Page |
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it Online |
Download Datasheet |
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KEC[KEC(Korea Electronics)]
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Part No. |
TIP112
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Description |
EPITAXIAl PlANAR NPN TRANSISTOR (MONOlITHIC CONSTRUCTION WITH BUIlT IN BASE-EMITTER shunt resistors INDUSTRIAl USE.)
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File Size |
73.40K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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