| |
|
 |
GENERAL SEMICONDUCTOR INC
|
| Part No. |
BYM12-300
|
| OCR Text |
...and storage temperature range t j ,t stg |
| Description |
1 A, 300 V, SILICON, SIGNAL DIODE, DO-213AB
|
| File Size |
58.22K /
2 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
PHILIPS[Philips Semiconductors]
|
| Part No. |
BLA1011-300
|
| OCR Text |
...cteristics
Table 5. Symbol Zth(j-h) Thermal characteristics Parameter transient thermal impedance from junction to heatsink Conditions Tcase = 25 C; tp = 50 s; = 2 %; PL = 300 W Typ 0.1 Max 0.15 Unit K/W
BLA1011-300_1
(c) NXP B.V. 2... |
| Description |
Avionics LDMOS transistors
|
| File Size |
45.37K /
9 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

Hamamatsu Photonics K.K. HAMAMATSU[Hamamatsu Corporation]
|
| Part No. |
P5968-300 P5968-060 P4247-16 P4247-44 P5968-100 P5968-105 P5968-200
|
| OCR Text |
...d, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, ... |
| Description |
InSb photovoltaic detector 光伏锑化铟探测器
|
| File Size |
167.79K /
4 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Microsemi
|
| Part No. |
0912GN-300
|
| OCR Text |
... 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 0912gn-300 250 watts -128us 10% transistor 65 volts, 960 mhz-1215mhz downloaded fro... |
| Description |
GaN Transistors
|
| File Size |
151.63K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|