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IRF[International Rectifier]
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| Part No. |
IRHM7064 IRHM8064
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHM7064. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
91.42K /
4 Page |
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Samsung
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| Part No. |
S6B0725X DS_S6B0725A_R15
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| OCR Text |
...s of semiconductor devices when irradiated with light. Consequently, the users of the packages which may expose chips to external light such as COB, COG, TCP and COF must consider effective methods to block out light from reaching the IC on... |
| Description |
Mobile DDI
From old datasheet system
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| File Size |
417.96K /
64 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNA8064 IRHNA7064
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHNA7064. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- an... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
81.43K /
4 Page |
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it Online |
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Samsung Electronic
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| Part No. |
S6A0071A DS_S6A0071
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| OCR Text |
...s of semiconductor devices when irradiated with light. Consequently, the users of the packages which may expose chips to external light such as COB, COG, TCP and COF must consider effective methods to block out light from reaching the IC on... |
| Description |
32 COM / 60 SEG Driver & Controller for Dot Matrix LCD
From old datasheet system
Mobile DDI
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| File Size |
162.85K /
33 Page |
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it Online |
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http://
FUJI ELECTRIC HOLDINGS CO., LTD.
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| Part No. |
YG963S6R
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| OCR Text |
...he Diodes should not used in an irradiated field since they ar radiation-proof. * e not Insatallation ESoldering involves temperatures which exceed the device storage * temperature rating.To avoid device damage and to ensure reliability, ob... |
| Description |
SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY
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| File Size |
135.93K /
12 Page |
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it Online |
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Micropac Industries, Inc.
MICROPAC[Micropac Industries]
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| Part No. |
42142
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| OCR Text |
... data of 4 representative units irradiated in Cobalt-60 chamber is only typical of one lot of operational amplifiers. Micropac does not guarantee performance of its Operational Amplifier to these radiation levels. Individual lots have to be... |
| Description |
RADIATION TOLERANT POWER OPERATIONAL AMPLIFIER OP-AMP, 200 uV OFFSET-MAX, 1 MHz BAND WIDTH, MDMA8
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| File Size |
195.93K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM7360SE JANSR2N7391
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| OCR Text |
...radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation perf... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)
TRANSISTOR N-CHANNEL(BVdss=400V Rds(on)=0.20ohm Id=22A)
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| File Size |
90.55K /
4 Page |
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it Online |
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