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  idmax Datasheet PDF File

For idmax Found Datasheets File :: 168    Search Time::1.141ms    
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    http://
IRF[International Rectifier]
Part No. IRIS-X6757
OCR Text ...nition IDpeak Drain Current * 1 idmax EAS Vcc VSSOLP IFB VFB VOCPBD PD1 PD2 TF Top Tstg Tch Maximum switching current *2 Single pulse avalanche energy *3 Input voltage for control part SS/OLP pin voltage FB pin inflow current FB pin voltage...
Description INTEGRATED SWITCHER

File Size 236.48K  /  9 Page

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    STMicro
Part No. L93PI 5866
OCR Text ... IOLeak VOClamp IOSC CO VDlow idmax IDleak Leakage current Output voltage during clamping Short-circuit current Internal output capacities Output voltage LOW Max. Output current Leakage current 2.3 3.5 5 60 1200 100 0.5 15 1 A ...
Description QUAD LOW SIDE DRIVER
From old datasheet system

File Size 89.39K  /  8 Page

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    L93PI

STMICROELECTRONICS[STMicroelectronics]
Part No. L93PI
OCR Text ... IOLeak VOClamp IOSC CO VDlow idmax IDleak Leakage current Output voltage during clamping Short-circuit current Internal output capacities Output voltage LOW Max. Output current Leakage current Diagnostic output DIAG 3/8 L93PI...
Description QUAD LOW SIDE DRIVER

File Size 55.18K  /  8 Page

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    STR-W6765

Allegro MicroSystems
Part No. STR-W6765
OCR Text ...ower Dissipation4 Symbol IDpeak idmax EAS VCC VSSOLP IFB VFB VOCPBD PD1 Terminal Conditions 1 - 3 Single pulse 1 - 3 TA = -20C to 125C Single pulse, VDD = 99 V, L = 20 mH, 1-3 ILpeak = 5.8 A 4-3 5-3 6-3 6 - 3 IFB within the limits of IFB 7-...
Description Quasi-Resonant Topology Primary Switching Regulators

File Size 420.35K  /  15 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. L9339MD L9339 L9339DIE1
OCR Text ... Diagnostic Output DIAG VDlow idmax Output voltage LOW Max. output current IDL < 0.6mA internal current limitation V D = 14V 1 5 1.3 15 V mA 4/9 L9339 ELECTRICAL CHARACTERISTICS (Continued) Symbol IDLeak Parameter Leakage current ...
Description    QUAD LOW SIDE DRIVER

File Size 64.80K  /  9 Page

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    IRFU3704Z IRFR3704Z

IRF[International Rectifier]
Part No. IRFU3704Z IRFR3704Z
OCR Text ...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFE...
Description    HEXFET Power MOSFET
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package

File Size 213.41K  /  11 Page

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    IRFU3707ZPBF IRFR3707ZPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFU3707ZPBF IRFR3707ZPBF
OCR Text ...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF...
Description HEXFET Power MOSFET HEXFET功率MOSFET
From old datasheet system

File Size 259.16K  /  11 Page

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    IRFU3711Z IRFR3711Z IRFR3711ZTR

International Rectifier
Part No. IRFU3711Z IRFR3711Z IRFR3711ZTR
OCR Text ...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFE...
Description 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 211.63K  /  11 Page

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    BUK566-60A

NXP Semiconductors
Philips Semiconductors
Part No. BUK566-60A
OCR Text ... = 100PD/PD 25 C = f(Tmb) ID / idmax % Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 10 8 BUK5y6-60A 7 6 VGS / V = 100 5 4.5 4 120 100 80 60 40 20 0 150 50 3.5 3 2.5...
Description POWERMOS TRANSISTOR LOGIC LEVEL FET

File Size 52.24K  /  7 Page

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    IRF3704ZCSPBF IRF3704ZCLPBF

International Rectifier
Part No. IRF3704ZCSPBF IRF3704ZCLPBF
OCR Text ...time the drain current rises to idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFE...
Description HEXFET POWER MOSFET

File Size 342.91K  /  11 Page

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For idmax Found Datasheets File :: 168    Search Time::1.141ms    
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