id-6.5a pdf Datasheet P5 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : BX5325PM 80C03 TDA8933 TX0225A IRFU3412 LCD10 ESD5344D 2SC4615
	Product Description
	Full Text Search

id-6.5a Datasheet PDF File

For id-6.5a Found Datasheets File :: 9726 Search Time::3.641ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ317
OCR Text	...ge temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -12 -7 2 4 2 1 150 -55 to +150 Unit V V A A A W C C ...6.5 V, VDS = 0 VDS = -8 V, VGS = 0 I D = -100 A, VDS = -5 V I D = -0.5 A1, VGS = -2.2 V I D = -1 A...
Description	Silicon P-Channel MOS FET
File Size	37.77K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Toshiba Semiconductor
Part No.	2SJ339
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-2...6 --7 --8 --9 --10 0 0 --5 --6 IT00662 Drain-to-Source Voltage, VDS - V 100 yfs -- ID IT00...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	39.40K / 4 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SJ424
OCR Text	ID ID (pulse) PD Tch Tstg Ratings -60 20 5 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR...6 0.35 270 170 75 35 0.5 min -60 500 Ratings typ max Unit V nA A V S pF pF ns ns (Ta = 25C) Un...
Description	MOSFET
File Size	23.37K / 1 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ456
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions 2.5 Ratings --250 30 --9 Unit V V A A W C C PW10s, duty cycle1%...6 --4 --2 0 0 --1 --2 --3 ID -- VDS --6 V Tc=25C --16 --14 --12 --10 --8 --6 ID -- VGS T...
Description	Ultrahigh-Speed Switching Applications
File Size	29.04K / 4 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	...e Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 20 325,9 50 150 -55 ~ +150 Unit V A A V mJ W C C >...6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1M...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...es. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute...6 Pch (W) I D (A) Maximum Safe Operation Area 10 s 100 s PW C D -100 -30 1.2 -10 -3 Ch...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	...es. * Large current capacitance ID = -5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maxi...6 Pch (W) Maximum Safe Operation Area -100 -30 I D (A) 1.2 -10 -3 Channel Dissipation ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ499
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10ms, duty cycle1% Tc=25C Conditions Ratings --30 20 --10 --32 1.0 30 150 --55 to +150 ...6 11 --0.9 --1.2 45 68 Ratings min --30 --10 10 --2.5 typ max Unit V A A V S m m pF pF pF ns ns ns n...
Description	Load Switching Applications
File Size	31.35K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ501
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 ...6 ID - VDS -10.0V -2.0 -1.8 ID - VGS VDS=-10V -25 C Ta= 0 -0.5 -1.0 -1.5 -2.0 -2.5 ...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	237.49K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Semicon Device
Part No.	2SJ502
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 1 : Gate 2 : Source 3 : Drain SANYO : CP 0.8 1.1 ...6 ID - VDS -8.0V -6.0V -2.0 -1.8 -1.6 ID - VGS VDS=-10V Ta= -25 C C 25 C -0.5 -1.0 -1.5...
Description	Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	169.75K / 4 Page	View it Online	Download Datasheet

For id-6.5a Found Datasheets File :: 9726 Search Time::3.641ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |