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2SA673A SM300C 74HC17 AN3728 LIMIT SMA11 29DL163 ML688T
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  id-6.4a Datasheet PDF File

For id-6.4a Found Datasheets File :: 3772    Search Time::1.312ms    
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    74LVU04 74LVU04D 74LVU04DB 74LVU04N 74LVU04PW 74LVU04PWDH

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. 74LVU04 74LVU04D 74LVU04DB 74LVU04N 74LVU04PW 74LVU04PWDH
OCR Text ...CTERISTICS 1.2 Vo (V) 300 ID (mA) 0.8 200 0.4 100 SV00395 0 0 0.4 V O 0.8 I D Vi (V) 1.2 0 Figure 1. Input (nA...6 4 I D (mA) VCC 1.2 3 0.47 mF input output 100 mF 0.8 2 Vi ~ (f = 1 kHz) A io ...
Description CERAMIC CHIP/MIL-PRF-55681
Hex inverter

File Size 128.03K  /  14 Page

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    DG408 FN3283 DG408DY DG408DJ DG409 DG409DY DG409DJ

INTERSIL[Intersil Corporation]
Part No. DG408 FN3283 DG408DY DG408DJ DG409 DG409DY DG409DJ
OCR Text ...ETER Drain OFF Leakage Current, ID(OFF) DG408 Test Conditions: V+ = +15V, V- = -15V, VAL = 0.8V, VAH = 2.4V, Unless Otherwise Specified (Con...6) TYP (NOTE 5) MAX 1 20 1 10 UNITS nA nA nA nA Negative Supply Current, I- Electrical Specifi...
Description Single 8-Channel/Differential 4-Channel / CMOS Analog Multiplexers
From old datasheet system
Single 8-Channel/Differential 4-Channel, CMOS Analog Multiplexers

File Size 326.38K  /  16 Page

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    IRF7403 IRF7403TRPBF

IRF[International Rectifier]
Part No. IRF7403 IRF7403TRPBF
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulsed Drain Current, V...6.8 nC VDS = 24V 18 V GS = 10V, See Fig. 6 and 12 --- VDD = 15V --- ID = 4.0A ns --- RG = 6.0 --- R...
Description Generation V Technology
Power MOSFET

File Size 112.84K  /  9 Page

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    IRFL014N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFL014N
OCR Text ... Avalanche Rated D G S ID = 1.9A Description Fifth Generation HEXFET(R) MOSFETs from International Rectifier utilize advanced p...6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.054 --- --- --- --- --- --- ...
Description 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管)
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)

File Size 140.28K  /  8 Page

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    MCH3301

Sanyo Semicon Device
Part No. MCH3301
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions SANYO : MCPH3...6 ID -- VDS 0V --3.0 ID -- VGS VDS= --10V --2 5C 0V --6 . --4 --1.4 --1.2 --1.0...
Description P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 30.52K  /  4 Page

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    MCH3302

SANYO[Sanyo Semicon Device]
Part No. MCH3302
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2x0.8mm) Conditions 1 : Gate 2 : ...6 9.5 20 16 4 1 1 -0.9 -1.5 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=--15...
Description P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 39.70K  /  4 Page

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    MCH3308 3LP01SS

SANYO[Sanyo Semicon Device]
Part No. MCH3308 3LP01SS
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.85 1 : G...6 typ max Unit V A A V S m m Marking : JH Contin ued on ne xt page. Any and all SANYO produ...
Description Ultrahigh-Speed Switching Applications

File Size 27.20K  /  4 Page

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    MCH3309

Sanyo Semicon Device
Part No. MCH3309
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings -20 10 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W C C Mounted on a c...
Description Ultrahigh-Speed Switching Applications

File Size 27.14K  /  4 Page

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    MCH3310

SANYO[Sanyo Semicon Device]
Part No. MCH3310
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions 0.15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings -30 20 --1.5 --6.0 0.9 150 --55 to +150 Unit V V A A W C C Mounted on a c...
Description P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications

File Size 27.25K  /  4 Page

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    STA508A

SANKEN[Sanken electric]
Part No. STA508A
OCR Text ID ID (pulse)*1 PT Ratings 120 20 6 10 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 80 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 (Ta=25C) Unit V V A A W W Electrical Characteristics Symbol...
Description MOS FET Array

File Size 24.68K  /  1 Page

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