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TriQuint Semiconductor, Inc.
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| Part No. |
AH125-89G
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| OCR Text |
... of 12 april 2010 ah125 ?w hi g h linearit y ingap hbt am p lifier c4 c2 r2 r4 l1 r1 c1 c9 c10 c8 c8 c9 c10 869-960 mhz reference d es...ip3 pout=+17dbm/tone, 1mhz spacing +44 +47 +49 dbm noise figure 7.9 7.7 7.5 db quiescent curr... |
| Description |
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| File Size |
1,144.98K /
12 Page |
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TriQuint Semiconductor, Inc.
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| Part No. |
ECP052D-G
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| OCR Text |
...ap/gaas hbt is able to achieve hi gh performance for various narrowband-tuned application circuits with up to +44 dbm oip3 and +28.5 dbm ...ip3 (2) dbm +44 test frequency mhz 900 gain db 15.5 17.8 input return loss db 18 ... |
| Description |
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| File Size |
208.76K /
4 Page |
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SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
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| Part No. |
KP028J
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| OCR Text |
... h an ne l struc t ure also ac hi ev ed an extr em ely lo w nois e fi gure . the de tai l s a b o u t pu lse-d o p e d fet cha ...ip3 ip3 --- 43 --- dbm rf power added ef ficiency ad d vds=8v ids=22 0m a f=2. 1gh... |
| Description |
1W GaAs Power FET (Pb-Free Type)
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| File Size |
595.23K /
13 Page |
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it Online |
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http://
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| Part No. |
HMC950 HMC95011
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| OCR Text |
... in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7.... |
| Description |
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz
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| File Size |
493.80K /
10 Page |
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it Online |
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