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  grown-junction Datasheet PDF File

For grown-junction Found Datasheets File :: 47    Search Time::1.5ms    
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    OptoDiode
Part No. OD-880L
OCR Text grown GaAlAs * 880nm peak emission for optimum matching with ODD-45W photodiode * Wide range of linear power output * Hermetically sealed TO...Junction Temperature Thermal Resistance, RTHJA1 -55C TO 100C 400C/W Typical 135C/W Typical 100C ...
Description HIGH-POWER GaAlAs IR EMITTERS

File Size 374.78K  /  2 Page

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    4N38300 4N38300W H11D4S

Fairchild Semiconductor
Part No. 4N38300 4N38300W H11D4S
OCR Text ...ode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is...Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Coll...
Description 6-pin DIP High Voltage Phototransistor Output Optocoupler

File Size 382.63K  /  9 Page

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    AD8224 AD8224_07 AD8224ACPZ-R7 AD8224ACPZ-RL AD8224ACPZ-WP AD8224-EVALZ

AD[Analog Devices]
Part No. AD8224 AD8224_07 AD8224ACPZ-R7 AD8224ACPZ-RL AD8224ACPZ-WP AD8224-EVALZ
OCR Text ...ies required in each system has grown. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no...Junction Temperature Package Glass Transition Temperature ESD (Human Body Model) ESD (Charge Device ...
Description The AD8224 is the first single-supply junction field effect transistor (JFET) input instrumentation
Precision, Dual-Channel, JFET Input Rail-to-Rail Instrumentation Amplifier

File Size 635.81K  /  28 Page

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    OD880F OD880F1 OD-880F OD-880F1

List of Unclassifed Manufacturers
ETC[ETC]
Part No. OD880F OD880F1 OD-880F OD-880F1
OCR Text ...bility liquid-phase epitaxially grown GaAlAs * 880nm peak emission for optimum matching with ODD-45W photodiode * Wide range of linear power...Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55C to 100C 100C 350C/W ...
Description HIGH POWER GAAIAS IR EMITTERS

File Size 71.15K  /  2 Page

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    OD-880

OptoDiode Corp
Part No. OD-880
OCR Text ...bility liquid-phase epitaxially grown GaAlAs .164 .167 .100 .041 All metal surfaces are gold plated. Dimensions are nominal values ...Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55C TO 100C 400C/W Ty...
Description HIGH-POWER GaAlAs IR EMITTERS

File Size 344.23K  /  2 Page

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    OD880F

OptoDiode Corp
Part No. OD880F
OCR Text ...bility liquid-phase epitaxially grown gaalas  880nm peak emission for optimum matching with odd-45w photodiode  wide range of line...junction temperature thermal resistance, r thja 1 thermal resistance, r thja 2 -55c to 100c 100c 350...
Description HIGH-POWER GaAlAs IR EMITTERS

File Size 255.75K  /  2 Page

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    H11D1.300 H11D4

Fairchild Semiconductor
Part No. H11D1.300 H11D4
OCR Text ...ode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is...Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Coll...
Description HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

File Size 107.38K  /  7 Page

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