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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN21A180IV
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| OCR Text |
gan-hemt 180W
Preliminary
FEATURES
High Voltage Operation : VDS=50V High Gain: 15dB(typ.) at Pout=45dBm(Avg.) High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability
EGN21A180IV
Hig... |
| Description |
High Voltage - High Power gan-hemt
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| File Size |
230.17K /
4 Page |
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it Online |
Download Datasheet
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CREE[Cree, Inc]
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| Part No. |
CGH40045
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| OCR Text |
GaN HEMT
Cree's CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applicatio... |
| Description |
45 W, RF Power GaN HEMT
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| File Size |
906.44K /
12 Page |
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it Online |
Download Datasheet
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Price and Availability
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