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  g1db Datasheet PDF File

For g1db Found Datasheets File :: 740    Search Time::1.75ms    
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    AT-42086 AT-42086-BLK AT-42086-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT-42086 AT-42086-BLK AT-42086-TR1
OCR Text ... 8 4.0 GHz G1 dB (dB) g1db 8 4.0 GHz 4 4 0 10 20 30 IC (mA) 40 50 0 0 0 10 20 30 IC (mA) 40 50 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 1. Output Power and 1 dB Compressed Gain vs. Coll...
Description Up to 6 GHz Medium Power Silicon Bipolar Transistor

File Size 49.16K  /  5 Page

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    FLU17ZM

Fujitsu Microelectronics
Fujitsu Component Limited.
Part No. FLU17ZM
OCR Text g1db=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a pla...
Description From old datasheet system
L-Band Medium & High Power GaAs FET

File Size 229.77K  /  8 Page

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    LP1500SOT223 LP1500SOT2231 LP1500SOT2232 LP1500SOT2233

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP1500SOT223 LP1500SOT2231 LP1500SOT2232 LP1500SOT2233
OCR Text ...S (TA = 25C) SYMBOLS IDSS P1dB g1db NF IP3 IMAX GM VP IGSO BVGS BVGD LP1500-SOT223-1 BLUE LP1500-SOT223-2 GREEN LP1500-SOT223-3 RED Output Power at 1dB Gain Compression f = 1800 Mhz VDS = 3.3V, IDS = 33% IDSS Power Gain at 1dB Gain Compres...
Description IC MOSFET DRIVER LS 8A SGL 8SOIC
IC MOSFET DRIVER LS 8A SGL 8-DIP
IC MOSFET DRVR LS 8A SGL 5TO-263
IC MOSFET DRVR LS 8A SGL 5TO-220
Low Noise/ High Linearity Packaged PHEMT
Low Noise, High Linearity Packaged PHEMT

File Size 27.77K  /  2 Page

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    FMM5709VZ

List of Unclassifed Manufacturers
ETC[ETC]
Part No. FMM5709VZ
OCR Text ... Gas 28 26 Associated Gain [dB] g1db [dB] 24 22 20 18 16 14 12 10 8 P1dB, g1db vs. FREQUENCY VDD=3V 17 16 15 14 P1dB [dBm] 13 12 11 10 9 8 7 16 18 20 22 24 26 28 30 32 34 36 Frequency [GHz] P1dB g1db 26 24 22 20 18 16 14 12 10 8 6 2...
Description K/ Ka Band Low Noise Amplifier MMIC

File Size 206.18K  /  12 Page

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    AT41485 AT-41485

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. AT41485 AT-41485
OCR Text ...FO G1 dB (dB) 4 NFO 8 g1db 4.0 GHz 3 2 1 3 0 0.5 1.0 2.0 2 0 3.0 4.0 5.0 4 0 10 20 30 40 0 10 20 30 40 FREQUENCY (GHz) IC (mA) IC (mA) Figure 1. Noise Figure and Associat...
Description Up to 6 GHz Low Noise Silicon Bipolar Transistor

File Size 41.36K  /  6 Page

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    FLL600IQ-2

Fujitsu Media Devices Limited
Part No. FLL600IQ-2
OCR Text ... IQ Symbol IDSS gm Vp VGSO P1dB g1db IDSR add Rth Channel to Case VDS = 12V f=1.96GHz IDS = 4.0A Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 14.4A VDS = 5V, IDS = 1.44A IGS = -1.44mA Min. -1.0 -5 47.0 9.5 Limits Typ. Max. 24 12 -2.0 48.0 ...
Description Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation
Push-Pull Configuration / Broad Frequency Range: 800 to 2000 MHz / Suitable for class AB operation

File Size 94.53K  /  4 Page

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    EFA072ANBSP EFA072A

Excelics Semiconductor, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. EFA072ANBSP EFA072A
OCR Text ...STICS (Ta = 25 C) SYMBOLS P1dB g1db PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Effic...
Description Low Distortion GaAs Power FET

File Size 42.48K  /  2 Page

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    EFA240D-SOT89NBSP EFA240D-SOT89

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Excelics Semiconductor
Part No. EFA240D-SOT89NBSP EFA240D-SOT89
OCR Text ...TICS (Ta = 25 OC) SYMBOLS P1dB g1db PAE NF IP3 Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 2GHz Vds=7V, Ids=350mA Gain at 1dB Compression f = 2GHz Vds=7V, Ids=350mA Power Added Efficiency at 1dB ...
Description DC-4GHz Low Distortion GaAs Power FET

File Size 35.97K  /  2 Page

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    FLM3439-12 FLM3439-12F

List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Part No. FLM3439-12 FLM3439-12F
OCR Text g1db = 11.5dB (Typ.) High PAE: add = 40% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM3439-12F is a power GaAs FET that is internally matche...
Description C-Band Internally Matched FET

File Size 290.76K  /  4 Page

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