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For finite Found Datasheets File :: 1878 Search Time::2.031ms
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				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06V ON2554
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM From old datasheet system
File Size	163.67K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
File Size	222.23K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP23P06V ON2569
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
File Size	192.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP2P50 MTP2P50E ON2583
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	From old datasheet system TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
File Size	230.76K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055VL MTP3055VL_D ON2587
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	161.53K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon）\u003d 0.15欧姆 From old datasheet system
File Size	160.18K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP30N06VL MTP30N06VL_D ON2590
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	From old datasheet system TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM
File Size	207.41K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon）\u003d 0.080欧姆 From old datasheet system
File Size	190.77K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MTP40N10E ON2608 ON2607
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM From old datasheet system
File Size	157.60K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP50N06EL MTP50N06
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
File Size	232.16K / 8 Page	View it Online	Download Datasheet

For finite Found Datasheets File :: 1878 Search Time::2.031ms
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