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epitaxy Datasheet PDF File

For epitaxy Found Datasheets File :: 119 Search Time::1.937ms
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				TRIQUINT[TriQuint Semiconductor]
Part No.	TQHBT
OCR Text	... Etch Stop for Uniformity MOCVD epitaxy High Linearity in PA applications High Density Interconnects; * 2 Global, 1 Local * Over 6 m Total Thickness * Dielectric Encapsulated Metals Thick Metal Interconnects: * Enhanced Thermal Management *...
Description	Precision, 100UA Gain Selectable Amplifier
File Size	259.37K / 5 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	SFH460
OCR Text	... * Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package Same package as SFH 216, SFH 400 and SFH 480 Applications * * * * Ph...
Description	GaAlAs-Lumineszenzdiode
File Size	76.63K / 5 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	SFH481 SFH48001 SFH482-2_3 SFH482-ME7800 SFH481-1_2 SFH481-2_3 SFH480 SFH480-2_3 SFH482 SFH482-1_2 SFH482-1/2 SFH481-1/2 SFH481-2/3 SFH482-2/3 SFH480-2/3
OCR Text	...e, fabricated in a liquid phase epitaxy process * Anode is electrically connected to the case * High reliability * Matches all Si-Photodetectors * Hermetically sealed package * SFH 480: Same package as SFH 216 * SFH 481: Same package as BPX...
Description	GaAlAs-Lumineszenzdioden
File Size	99.90K / 9 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	LD242 LD242-2 LD242-3 LD242E7800
OCR Text	... * Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 * DIN humidity caregory in acc. with DIN 40 040 GQG Applications * Pho...
Description	GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
File Size	145.47K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	PS0.25-5
OCR Text	epitaxy Low Dark current 0,25 mm active area Parameters: Active Area Dark Current at 20 V Total Capacitance at 20 V Spectral Responsivity at 800 nm Shunt Resistance at 10 mV Cut-off Frequency 1) (-3dB) Rise Time 1) at 20 V N.E.P. at 0 V a...
Description	High Speed epitaxy Low Dark curren 0.25mm active area
File Size	171.53K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	LSC2110-622-ST LSC2110-622 LSC2110-622-BI LSC2110-622-DN LSC2110-622-FP LSC2110-622-SA LSC2110-622-SC LSC2110-622-SF
OCR Text	...y the Metal Organic Vapor Phase epitaxy (MOVPE) process, resulting in long lifetimes and modest threshold currents. LSC2110-622 package includes a photodiode for monitoring the laser output, a thermistor for monitoring the laser submodule t...
Description	2.5 mW 14 Pin DIL Cooled Laser Module
File Size	106.48K / 6 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	SFH4811 SFH4813
OCR Text	... * Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package Applications * * * * Photointerrupters IR remote control Sensor tech...
Description	IR-Lumineszenzdiode (950 nm) im TO-46-Geh?se Infrared Emitter (950 nm) in TO-46 Package Lead (Pb) Free Product - RoHS Compliant IR-Lumineszenzdiode (950 nm) im TO-46-Geh漉se Infrared Emitter (950 nm) in TO-46 Package Lead (Pb) Free Product - RoHS Compliant
File Size	45.21K / 2 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	KSY46
OCR Text	... 1) Metal Organic Vapour Phase epitaxy Semiconductor Group 1 1998-11-13 1.3 0.1 KSY 46 Maximum Ratings Parameter Operating temperature Storage temperature Supply current Thermal conductivity, soldered in air Characteristi...
Description	Hall Sensor Preliminary Data
File Size	19.81K / 3 Page	View it Online	Download Datasheet

				SKYWORKS[Skyworks Solutions Inc.]
Part No.	GMV9822-000 GMV7811 GMV7811-000 GMV7821 GMV7821-000 GMV9801 GMV9801-000 GMV9821 GMV9821-000 GMV9822
OCR Text	...re grown by MBE (Molecular Beam epitaxy), which allows monolayer control of the doping profile.This translates to superb waferto-wafer uniformity. The series resistance is lower, and Q is higher when compared to an equivalent silicon hypera...
Description	GaAs Hyperabrupt Junction Varactor Diodes
File Size	54.27K / 3 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	181282
OCR Text	...ensions in microns) p-Electrode epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse ...
Description	AlInGaP / GaAs LED Chips
File Size	48.58K / 1 Page	View it Online	Download Datasheet

For epitaxy Found Datasheets File :: 119 Search Time::1.937ms
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