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  DSK-7A2B Datasheet PDF File

For DSK-7A2B Found Datasheets File :: 136+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |   

    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
Description 1Mx16 bit Uni-Transistor Random Access Memory

File Size 178.10K  /  10 Page

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Texas Instruments

Part No. TMCS1107A2BQDT
Description ±420V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    DSK6F4016U6G K6F4016U6G K6F4016U6G-F DS_K6F4016U6G

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. DSK6F4016U6G K6F4016U6G K6F4016U6G-F DS_K6F4016U6G
Description    256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 178.87K  /  9 Page

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Texas Instruments

Part No. TMCS1107A2BQDR
Description ±420V basic isolation, 20Arms 80kHz Hall-effect current sensor with reference 8-SOIC -40 to 125
Tech specs    

Official Product Page

    K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E
Description 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 157.13K  /  9 Page

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Texas Instruments

Part No. TMCS1107A2BQDRQ1
Description AEC-Q100, ±420-V isolated Hall-effect current sensor with internal reference 8-SOIC -40 to 125
Tech specs    

Official Product Page

    DSK6F8016U6C

Samsung Electronic
Samsung semiconductor
Part No. DSK6F8016U6C
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 171.88K  /  9 Page

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    SAMSUNG
Part No. DSK6F1016U4C
Description 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 156.67K  /  9 Page

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    DSK6F8016U6B K6F8016U6 DS_K6F8016U6B

SAMSUNG[Samsung semiconductor]
SAMSUNG [Samsung semiconductor]
Samsung Electronic
Part No. DSK6F8016U6B K6F8016U6 DS_K6F8016U6B
Description    512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 156.39K  /  9 Page

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    DSK6F3216T6M K6F3216T6M K6F3216T6M-F DS_K6F3216T6M

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK6F3216T6M K6F3216T6M K6F3216T6M-F DS_K6F3216T6M
Description 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

File Size 165.73K  /  9 Page

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    DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

File Size 236.21K  /  18 Page

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    DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 K9F1208U0M-YIB0 DS_K9F1208U0M

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK9F1208U0M K9F1208U0 K9F1208U0M- K9F1208U0M-YCB0 K9F1208U0M-YIB0 DS_K9F1208U0M
Description 64M x 8 Bit NAND Flash Memory

File Size 1,135.14K  /  41 Page

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    DSK4S161622D K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. DSK4S161622D K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 K4S161622D-TI_E80 DS_K4S161622D K4S161622D-TI_E10 K4S161622D-TI_E50 K4S161622D-TI_E55 K4S161622D-TI_E60 K4S161622D-TI_E70
Description 1M x 16 SDRAM

File Size 677.20K  /  43 Page

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