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Motorola
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| Part No. |
MRF65225D
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| OCR Text |
...o gate voltage drain current (v ds = 26 vdc, v gs = 0) i dss e e 1.0 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0) i gss e ...109 0.625 0.775 127 4.20 75 0.073 9 0.707 111 0.650 0.774 129 4.03 73 0.072 12 0.707 113 0.675 0.774... |
| Description |
MRF6522-5R1 RF Power Transistor
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| File Size |
114.99K /
8 Page |
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it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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| Part No. |
FDN8601
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| OCR Text |
ds(on) = 109 m at v gs = 10 v, i d = 1.5 a max r ds(on) = 175 m at v gs = 6 v, i d = 1.2 a high performance trench technology for extremely low r ds(on) high power and current handling capability in a widely used surfa... |
| Description |
High performance trench technology for extremely low rDS(on)
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| File Size |
91.84K /
2 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
CLX27-05 CLX27-10
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| OCR Text |
...ues unit drain-source voltage v ds 11 v drain-gate voltage v dg 13 v gate-source voltage v gs - 6 v drain current i d 420 ma gate forward cu...109 0,0463 31 0,213 -140 0,43 21,5 1,5 0,844 -111 6,298 105 0,0478 29 0,224 -144 0,44 21,2 1,6 0,839... |
| Description |
HiRel X-Band GaAs Power-MESFET
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| File Size |
611.05K /
9 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
FDN8601N
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| OCR Text |
ds(on) = 109 m at v gs = 10 v, i d = 1.5 a max r ds(on) = 175 m at v gs = 6 v, i d = 1.2 a high performance trench technology for extremely low r ds(on) high power and current handling capability in a widely used surfa... |
| Description |
SuperSOT-3
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| File Size |
389.61K /
2 Page |
View
it Online |
Download Datasheet |
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