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  di-760 Datasheet PDF File

For di-760 Found Datasheets File :: 664    Search Time::1.39ms    
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    Semikron
Part No. SKM400GA128D
OCR Text ...RRM IF = 300 A; Tj = 125 C Q rr di/dt = 5200 A/s Err VGE = 0 V FWD under following conditions: VF = VEC IF = A; V GE = 0 V; Tj = 25 (125) C VTO Tj = 25 (125) C rT Tj = 25 (125) C I RRM IF = A; T j = 125 C Q rr VGE = 0 V Err Thermal Characte...
Description IGBT Power Module

File Size 58.35K  /  4 Page

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    IRG4BC20S

IRF[International Rectifier]
Part No. IRG4BC20S
OCR Text ... ra te d 10 5 Id e a l di o de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 ...
Description 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)

File Size 154.73K  /  8 Page

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    MDI150-12A4

IXYS Corporation
Part No. MDI150-12A4
OCR Text ...nC 0 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4...
Description IGBT Modules Short Circuit SOA Capability Square RBSOA

File Size 118.28K  /  4 Page

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    IRFR3411 IRFR3411PBF IRFU3411PBF

IRF[International Rectifier]
Part No. IRFR3411 IRFR3411PBF IRFU3411PBF
OCR Text ... = 25C, IF = 16A --- 505 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L =1.5mH RG = 2...
Description HEXFET Power MOSFET

File Size 223.72K  /  10 Page

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    MMBD1703 MMBD1703A MMBD1701 MMBD1701A MMBD1704 MMBD1704A MMBD1705 MMBD1705A

FAIRCHILD[Fairchild Semiconductor]
Part No. MMBD1703 MMBD1703A MMBD1701 MMBD1701A MMBD1704 MMBD1704A MMBD1705 MMBD1705A
OCR Text ... R -P OW 150 100 50 0 DI -C SS ON IPA TIN OU TI ON SF OR -m WA W RD CU RR EN TIo - AVER mA AGE R ECTIFIED CURREN T - mA ER 0 25 50 75 100 125 150 o T A- AMBIENT TEMPERATURE ( C) 175
Description High Conductance Low Leakage Diode

File Size 38.77K  /  3 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP02N80C3 SPA02N80C3
OCR Text ...bol IS I SM VSD t rr Q rr I rrm di rr/dt Conditions min. TC=25C Values typ. 1 520 2 6 200 max. 2 6 1.2 - Unit A VGS =0V, I F=IS...760 740 45 65 85 105 125 C 155 Tj 720 -60 -20 20 60 100 C 180 Tj Page ...
Description Cool MOS&#153; Power Transistor
Cool MOS Power Transistor
Cool MOS& Power Transistor
Cool MOS™ Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...

File Size 258.86K  /  12 Page

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    IRF540N IRF540NPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF540N IRF540NPBF
OCR Text ... = 25C, IF = 16A --- 505 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD 16A, di/dt 340A/s, VDD V...
Description Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 44mohm,身份证\u003d 33A条)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 97.90K  /  8 Page

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    IRFU3411

International Rectifier
Part No. IRFU3411
OCR Text ... = 25C, IF = 16A --- 505 760 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L =1.5mH RG = 2...
Description HEXFET? Power MOSFET

File Size 110.74K  /  10 Page

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    MSK3014

ETC
Part No. MSK3014
OCR Text ...8.4A VGS=0V (Q1,Q4) 1 1 IS=9.0A di/dt=100A/S (Q2,Q3) IS=-8.4A di/dt=100A/S (Q1,Q4) IS=9.0A di/dt=100A/S (Q2,Q3) IS=-8.4A di/dt=100A/S (Q1,Q4...760 260 170 1.3 -1.6 130 130 650 650 Max. 25 -25 100 4.0 4.0 0.20 0.28 0.11 0.20 44 6.2 21 58 8.3 32...
Description H-BRIDGE MOSFET POWER MODULE

File Size 316.12K  /  5 Page

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