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Fairchild Semiconductor, Corp.
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| Part No. |
IRF840S
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| OCR Text |
...ng t j =25 c (3) i sd 8a, di/dt 160a/ m s, v dd bv dss , starting t j =25 c (4) pulse test: pulse width = 250 m s, duty cycl...500 100 0 150 0 200 0 c iss = c gs + c gd ( c ds = s horte d ) c oss = c ds + c gd c rss = c gd... |
| Description |
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为0.85Ω,漏电流A N沟道功率MOSFET(不适用沟道增强型功率马鞍山场效应管(漏源电压为500V及导通电阻为0.85Ω,漏电流A)条
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| File Size |
233.78K /
7 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
P13NK50Z
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| OCR Text |
...c dv/dt (3) 3. i sd 11 a, di/dt 200 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 4.5 v/ns v iso insulation wit...500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, t ... |
| Description |
Search --To STP13NK50Z
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| File Size |
565.49K /
15 Page |
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it Online |
Download Datasheet
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