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70251 1N4748A IPD60R3 MC1204L TPC6503 59M4X Z25YL IRF7460
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  di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569    Search Time::1.687ms    
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    IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 IXFN-48N50U3 IXFN-48N50U2

IXYS Corporation
Part No. IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 IXFN-48N50U3 IXFN-48N50U2
OCR Text ...M TC = 25C Repetitive IS IDM, -di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 44N50 48N50 44N50 48N50 Maximum Ratings 500 500 20 30 44 48 176 192 24 30 5 V V V V miniBLOC, SOT-227 B 1 2 4 ID25 IDM IAR EAR dv/dt A A...
Description HiPerFET Power MOSFET (Buck & Boost Configurations for PFC & Motor Control Circuits最大漏源击穿电00V,导通电.10Ω的N沟道增强型HiPerFET功率MOSFET(步步降配置,用于PFC和电机控制电路))
HiPerFET Power MOSFETs
MOSFET Modules

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    FFPF60B150DS FFPF60B150DSTU

FAIRCHILD[Fairchild Semiconductor]
Part No. FFPF60B150DS FFPF60B150DSTU
OCR Text ...verse Recovery Charge (IF =20A, di/dt = 200A/s) TC = 25 C TC = 100 C TC = 25 C TC = 100 C Min. Typ. Max. Units V 2.2 2.0 A 10 100 90 8 36...500 600 0.001 0 300 600 900 1200 1500 Reverse Voltage , VR [V] Reverse Voltage , VR [V] ...
Description 6A/1500V Damper and 20A/600V Modulation Diode
DAMPER MODULATION DIODE

File Size 55.35K  /  6 Page

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    Fairchild Semiconductor, Corp.
Part No. IRF840S
OCR Text ...ng t j =25 c (3) i sd 8a, di/dt 160a/ m s, v dd bv dss , starting t j =25 c (4) pulse test: pulse width = 250 m s, duty cycl...500 100 0 150 0 200 0 c iss = c gs + c gd ( c ds = s horte d ) c oss = c ds + c gd c rss = c gd...
Description N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为500V,导通电阻为0.85Ω,漏电流A N沟道功率MOSFET(不适用沟道增强型功率马鞍山场效应管(漏源电压为500V及导通电阻为0.85Ω,漏电流A)条

File Size 233.78K  /  7 Page

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    STTH5R06DJF

STMicroelectronics
Part No. STTH5R06DJF
OCR Text ... = 25 c i f = 1 a v r = 30 v di f /dt = - 100 a/s 30 40 ns i f = 1 a v r = 30 v di f /dt = - 50 a/s 40 55 i rm reverse recovery curren...500 i f =i f(av) v r =400 v t j =125 c i rm (a) di f /dt(a/s) 0 20 40 60 80 100 120 140 050 1 00 1 5...
Description    High energy avalanche capability

File Size 160.20K  /  9 Page

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    ST Microelectronics
Part No. P13NK50Z
OCR Text ...c dv/dt (3) 3. i sd 11 a, di/dt 200 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 4.5 v/ns v iso insulation wit...500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, t ...
Description Search --To STP13NK50Z

File Size 565.49K  /  15 Page

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    STTH5R06-Y

STMicroelectronics
Part No. STTH5R06-Y
OCR Text ..., i r = 1 a 20 ns i f = 1 a, di f /dt = - 50 a/s, v r = 30 v 35 i rm reverse recovery current t j = 125 c i f = 5 a, di f /dt = - 200...500 i f =i f(av) v r =400 v t j =125 c di /dt(a/s) f characteristics stth5r06-y 4/9 doc id 17655 r...
Description    Low reverse recovery current

File Size 122.01K  /  9 Page

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    MTW20N50E-D

ON Semiconductor
Part No. MTW20N50E-D
OCR Text ... (i s = 20 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 159 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 6.67 m c...500 1 10 100 1000 10000 t j , junction temperature ( c) figure 5. onresistance variation with temp...
Description Power MOSFET 20 Amps, 500 Volts N-Channel TO-247

File Size 90.56K  /  8 Page

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    D2F-01 D2F-01-T D2F-01-D D2F-01-D3 D2F-01F D2F-01F-A D2F-01F-D D2F-01F-D3 D2F-01F-T D2F-01FL-A D2F-01FL-A1 D2F-FL30-A D2

Omron Electronics LLC
Part No. D2F-01 D2F-01-T D2F-01-D D2F-01-D3 D2F-01F D2F-01F-A D2F-01F-D D2F-01F-D3 D2F-01F-T D2F-01FL-A D2F-01FL-A1 D2F-FL30-A D2F-01FL30-A D2F-FL30-A1 D2F-01FL30-A1 D2F-FL30-D D2F-01FL30-D D2F-FL30-D3 D2F-01FL30-D3 D2F-FL30-T D2F-01FL30-T
OCR Text ...5 12. 8 0.15 5. 8 0.15 3 -1.2 di a . hole s 5.0 8 0.1 12. 8 0.15 5. 8 0.15 2.6 0.2 0.4 3 .1 0.2 1.5 0.9 5.0 8 5.0 8 6.5 0.1 3 .15 12. 8 0.15 5. 8 0.15 2.6 0.2 0.4 3 .1 0.2 1.5 0.9 5.0 8 5.0 8 6.5 0.1 3 .15 12. 8 0.15 5. 8 0.1...
Description    Incorporating a snapping mechanism made with two highly precise split springs that ensures long durability

File Size 731.38K  /  6 Page

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