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  DF3-8P-2H50 Datasheet PDF File

For DF3-8P-2H50 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    DF3A3.3FU

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A3.3FU
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 148.06K  /  3 Page

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Coilcraft Inc

Part No. DO5022H-501MLB
Description Power inductor, 20% tol, SMT, RoHS
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    DF3A6.2LFV

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 116.64K  /  3 Page

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Coilcraft Inc

Part No. DO5022H-501MLD
Description Power inductor, 20% tol, SMT, RoHS
Tech specs    

Official Product Page

    DF3A5.6LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 131.60K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501ATPV8
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    TOSHIBA[Toshiba Semiconductor]
Part No. DF3A8.2LFU
Description DIODES FOR PROTECTING AGAINST ESD

File Size 81.99K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501ETPV8
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. DF3A8.2LFE
Description DF3A8.2LFE

File Size 201.00K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501ATPA
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. DF3A6.8LFU
Description TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type

File Size 82.02K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501ETPA
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    TOSHIBA[Toshiba Semiconductor]
Part No. DF3A6.8LFE
Description Diodes for Protecting Against ESD

File Size 84.11K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501ATPA8
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    DF3A5.6LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 125.13K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501ETPA8
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    DF3A6.2LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 138.76K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501CTPA8
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

    DF3A6.8LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.8LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 119.34K  /  3 Page

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Renesas Electronics Corporation

Part No. 74FCT162H501CTPV
Description 18-BIT BIDIR. BUF/LTCH
Tech specs    

Official Product Page

For DF3-8P-2H50 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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