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  cre Datasheet PDF File

For cre Found Datasheets File :: 1953    Search Time::1.25ms    
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    SANYO[Sanyo Semicon Device]
Part No. 2SC4976 2SA1875
OCR Text ...igh -frequency characteristic : cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 ...
Description PNP Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications

File Size 31.08K  /  5 Page

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    BFG505 BFG505_X BFG505/X BFG540/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG505 BFG505_X BFG505/X BFG540/X
OCR Text ...TA SYMBOL VCBO VCES IC Ptot hFE cre fT GUM PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts 130 C VCE = 6 V; IC = 5 m...
Description    NPN 9 GHz wideband transistors

File Size 159.13K  /  16 Page

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    Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC4787
OCR Text ...CBO VCBO VCEO VEBO hFE VCE(sat) cre PG fT Conditions VCB = 20V, IE = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 58MHz VCB = 10...
Description Silicon NPN epitaxial planer type(For intermediate frequency amplification) 50 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 39.08K  /  2 Page

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    CEL[California Eastern Labs]
Part No. NE85639R-T1 NE856 NE85600 NE85618-T1 NE85618-T1-A NE85619-T1-A NE85630-T1 NE85630-T1-A NE85632 NE85632-A NE85633-T1B NE85633-T1B-A NE85634-T1 NE85634-T1-A NE85635 NE85639-T1 NE85639-T1-A
OCR Text ...120 300 120 300 ICBO IEBO cre PT RTH (J-A) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Noise Figure at VCE...
Description NPN SILICON HIGH FREQUENCY TRANSISTOR

File Size 716.98K  /  26 Page

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    BFR540 BFR54

NXP Semiconductors
Philips Semiconductors
Part No. BFR540 BFR54
OCR Text ...TA SYMBOL VCBO VCES IC Ptot hFE cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to...
Description NPN 9 GHz wideband transistor

File Size 101.73K  /  16 Page

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    NE94433-T1B NE944 NE94430 NE94430-T2 NE94433 2SC3545-T1B 2SC4184-T2 NE94430-T44-A 2SC4184 2SC3545

California Eastern Labs
NEC[NEC]
NEC Corp.
Duracell
NEC, Corp.
Part No. NE94433-T1B NE944 NE94430 NE94430-T2 NE94433 2SC3545-T1B 2SC4184-T2 NE94430-T44-A 2SC4184 2SC3545
OCR Text ...TYP * LOW FEEDBACK CAPACITANCE: cre= 0.55 pF TYP NE944 SERIES DESCRIPTION The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for ...
Description    NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NPN硅晶体管振荡器和混合

File Size 57.27K  /  8 Page

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    BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG67/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG67/X
OCR Text ...ERENCE DATA SYMBOL VCEO IC Ptot cre fT GUM F PARAMETER collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure Ts 65 C IC = ic = 0; VCB =...
Description NPN 8 GHz wideband transistors
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体

File Size 133.29K  /  16 Page

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For cre Found Datasheets File :: 1953    Search Time::1.25ms    
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