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  class-ab Datasheet PDF File

For class-ab Found Datasheets File :: 4011    Search Time::1.094ms    
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    TDA1308A TDA1308AT TDA1308AUK TDA1308T TDA1308TT TDA1308T/N2112 TDA1308T/N2115 TDA1308/N2112 TDA1308TT/N2118

NXP Semiconductors N.V.
Part No. TDA1308A TDA1308AT TDA1308AUK TDA1308T TDA1308TT TDA1308T/N2112 TDA1308T/N2115 TDA1308/N2112 TDA1308TT/N2118
OCR Text class-ab stereo headphone driver Rev. 04 -- 25 January 2007 Product data sheet 1. General description The TDA1308; TDA1308A is an integrated class-ab stereo headphone driver contained in an SO8, DIP8 or a TSSOP8 plastic package. The TD...
Description class-ab stereo headphone driver; Package: SOT96-1 (SO8); Container: Tube 0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO8
class-ab stereo headphone driver; Package: SOT96-1 (SO8); Container: Tape reel smd 0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO8
class-ab stereo headphone driver; Package: SOT97-1 (DIP8); Container: Tube 0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDIP8
class-ab stereo headphone driver; Package: SOT505-1 (TSSOP8); Container: Reel Pack, SMD, 13&quot; 0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO8

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    BLF6G27-10 BLF6G27-10G

NXP Semiconductors
Part No. BLF6G27-10 BLF6G27-10G
OCR Text ...erformance at Tcase = 25 C in a class-ab production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 19 D (%) 20 ACPR885k (dBc) -49[2] ACPR1980k (dBc) -64...
Description WiMAX power LDMOS transistor

File Size 102.02K  /  15 Page

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    BLF4G10-160

NXP Semiconductors
Part No. BLF4G10-160
OCR Text ...Tcase = 25 C in a common source class-ab test circuit. Mode of operation f CW 2-tone GSM EDGE CDMA [1] [2] VDS PL 28 28 28 28 PL(AV) Gp D ACPR400 ACPR600 ACPR750 ACPR1980 EVMrms IMD3 (dBc) -61[1] (dBc) -72[1] (dBc) -45[2] (dBc)...
Description UHF power LDMOS transistor

File Size 115.68K  /  14 Page

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    BLL1214-250R

NXP Semiconductors N.V.
Part No. BLL1214-250R
OCR Text ...ms; = 10 %; in a common source class-ab test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 36 IDq (mA) 150 PL (W) Gp (dB) D (%) 47 Pdroop(pulse) (dB) 0.2 tr (ns) 15 tf (ns) 5 250 13 CAUTION This device is sensitive ...
Description L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor

File Size 122.69K  /  12 Page

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    BLV103

Philips Semiconductors
Part No. BLV103
OCR Text ...is intended for common emitter, class-ab operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. PINNING - SOT171 k, halfpage BLV103 QUICK REFERENCE DATA RF performance at...
Description UHF power transistor

File Size 89.32K  /  10 Page

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    BLV193

Philips Semiconductors
Part No. BLV193
OCR Text ...tor intended for common emitter class-A and class-ab operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171 1 2 4 6 MBB...
Description UHF power transistor

File Size 107.99K  /  14 Page

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    BLF6G22-180PN

NXP Semiconductors
Part No. BLF6G22-180PN
OCR Text ...Tcase = 25 C in a common source class-ab production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 D (%) 27.5 ACPR (dBc) -35[1] Test signal: 3GPP; test m...
Description Power LDMOS transistor

File Size 76.97K  /  11 Page

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    PT230505 PT2305 PT2305-D PT2305-S PT2305-HT

Princeton Technology Corp
Princeton Technology Co...
Part No. PT230505 PT2305 PT2305-D PT2305-S PT2305-HT
OCR Text Class AB Audio Power Amplifier PT2305 EDESCRIPTION The PT2305 is an audio power amplifier utilizing CMOS Technology specially designed for audio purpose. It can deliver 2.5W x 2 power output to the 4 load. The power consumption is ve...
Description 2.5W ? 2 Class AB Audio Power Amplifier
2.5W × 2 Class AB Audio Power Amplifier

File Size 539.37K  /  27 Page

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    BLS6G3135-20 BLS6G3135S-20

NXP Semiconductors
Part No. BLS6G3135-20 BLS6G3135S-20
OCR Text ...0 s; = 10 %; IDq = 50 mA; in a class-ab production test circuit. Mode of operation f (GHz) Pulsed RF VDS (V) PL (W) 20 Gp (dB) 15.5 D (%) 45 tr (ns) 20 tf (ns) 10 3.1 to 3.5 32 CAUTION This device is sensitive to ElectroStatic Discha...
Description LDMOS S-Band radar power transistor

File Size 69.16K  /  12 Page

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    BLF6G27S-4508 BLF6G27S-45 BLF6G27-45

NXP Semiconductors N.V.
Part No. BLF6G27S-4508 BLF6G27S-45 BLF6G27-45
OCR Text ...erformance at Tcase = 25 C in a class-ab production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 7 Gp (dB) 18 D (%) 24 ACPR885k (dBc) -49[2] ACPR1980k (dBc) -64...
Description Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor

File Size 117.03K  /  16 Page

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For class-ab Found Datasheets File :: 4011    Search Time::1.094ms    
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