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Mitsubishi Electric Corporation
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| Part No. |
FS50UMJ-03
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| OCR Text |
...el to case i s = 25a, dis/dt = c50a/ m s performance curves 10 0 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 0 357 2 10 1 357 2 10 2 357 2 3 23 t c = 25? single pulse tw = 10 m s 100 m s 10ms 1ms dc 0 10 20 30 40 50 0 200 50 100 150 power dissipat... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
47.04K /
4 Page |
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it Online |
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Powerex, Inc.
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| Part No. |
FY7BCH-02B
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| OCR Text |
...mbiet i s = 1.5a, d is /d t = c50a/ m s 20 0.5 v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 0.1 0.1 1.3 21 30 0.147 1.10 78.1 drain-source breakdown voltage gate -source leakage current drain-source le... |
| Description |
FY7BCH-02B Datasheet 99K/MAR.20.03 FY7BCH-02B Datasheet 99K/MAR.20.03 FY7BCH - 02B数据99K/MAR.20.03
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| File Size |
96.57K /
6 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
FS3UM-14
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| OCR Text |
...el to case i s = 15a, dis/dt = c50a/ m s performance curves 0 10 20 30 40 50 0 200 50 100 150 power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
50.78K /
4 Page |
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IXYS, Corp.
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| Part No. |
IXGH25N100AU1
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| OCR Text |
...transient 30 v i c25 t c = 25 c50a i c90 t c = 90 c25a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t vj = 125 c, r g = 33 w i cm = 50 a (rbsoa) clamped inductive load, l = 100 m h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +... |
| Description |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
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| File Size |
315.47K /
6 Page |
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it Online |
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