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c cp.p Datasheet PDF File

For c cp.p Found Datasheets File :: 9934 Search Time::1.375ms
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				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2Sc4054
OCR Text	... EBO collector current Dc I 5 A c collector current Peak I 10 cP Base current Dc I 2 A B Base current Peak I 4 BP Total Transistor DissipationTc = 25*Z P 30 W T Dielectric Strength Vdis Terminals to case, Ac 12minute kV Mounting Torque TOR ...
Description	Switching Power Transistor(5A NPN)
File Size	360.85K / 12 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2Sc4055
OCR Text	...I = 0.2A Sustaining Voltage cEO c collector cutoff current At rated Voltage I cBO I cEO Emitter cutoff current At rated Voltage I EBO Dc current Gain h = cE c 4A FE V = 5V, I = h FEL V = 5V, I cE c 1mA collector to Emitter V (sat)I = 4A Sat...
Description	Switching Power Transistor(8A NPN)
File Size	386.37K / 12 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2Sc4056
OCR Text	... EBO collector current Dc I 8 A c collector current Peak I 16 cP Base current Dc I 4 A B Base current Peak I 8 BP Total Transistor DissipationTc = 25*Z P 45 W T Dielectric Strength Vdis Terminals to case, Ac 12minute kV Mounting Torque TOR ...
Description	Switching Power Transistor(8A NPN)
File Size	386.82K / 12 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2
OCR Text	...OLUTE MAXIMUM RATINGS (TA = +25 c) Parameter Drain-Source Voltage Gate-Source Voltage Drain current (Dc) Drain current (Pulse) Symbol VDSS ...cP(K) Printed in Japan (c) 1994 2SJ357 ELEcTRIcAL SPEcIFIcATIONS (TA = +25 c) Parameter D...
Description	P-channel MOS FET(-30V, -3A) P-cHANNEL MOS FET FOR HIGH-SPEED SWITcH From old datasheet system
File Size	63.14K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	...g -60 # 20 V V V A A W W c c A mJ -20, 0 # 20 # 80 Total Power Dissipation (TA = 25c) Total Power Dissipation (Tc = 25c) chann...cP(K) Printed in Japan (c) 1998 2SJ492 ELEcTRIcAL cHARAcTERISTIcS (TA = 25 c) cHARAcTERIS...
Description	From old datasheet system SWITcHING P-cHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	...g -60 # 20 V V V A A W W c c A mJ -20, 0 # 16 # 64 Total Power Dissipation (Tc = 25c) Total Power Dissipation (TA = 25c) chann...cP(K) Printed in Japan (c) 1999 2SJ493 ELEcTRIcAL cHARAcTERISTIcS (TA = 25 c) cHARAcTERIS...
Description	From old datasheet system SWITcHING P-cHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...otal Power Dissipation (Tc = 25 c) Total Power Dissipation (TA = 25 c) channel Temperature Storage Temperature VDSS VGSS (Ac) VGSS (Dc) ID (...cP(K) Printed in Japan (c) 1998 2SJ494 ELEcTRIcAL cHARAcTERISTIcS (TA = 25 c) cHARAcTERIS...
Description	From old datasheet system SWITcHING P-cHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ501
OCR Text	...0 -55 to +150 Unit V V A A W c c Electrical characteristics at Ta = 25c Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain current Gate-to-Source Leakage current cutoff Voltage Forward Transfer Admittance Static Drai...
Description	P-channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	237.49K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. Sanyo Semicon Device
Part No.	2SJ502
OCR Text	...0 -55 to +150 Unit V V A A W c c Electrical characteristics at Ta = 25c Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain current Gate-to-Source Leakage current cutoff Voltage Forward Transfer Admittance Static Drai...
Description	Ultrahigh-Speed Switching Applications 超高速开关应 P-channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	169.75K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text	... 150 -55 to +150 V V A A W W c c Gate Gate Protection Diode Marking: XB Body Diode Source Total Power Dissipation Total Power...cP(K) Printed in Japan (c) 1998, 1999 2SJ557 ELEcTRIcAL cHARAcTERISTIcS (TA = 25 c) cHARA...
Description	Pch enhancement type MOS FET P-cHANNEL MOS FIELD EFFEcT TRANSISTOR FOR SWITcHING
File Size	60.99K / 8 Page	View it Online	Download Datasheet

For c cp.p Found Datasheets File :: 9934 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |