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1N5522 05F2F 62012 0459846 MX584KN C190KSKT 922102 MX584
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For b s Found Datasheets File :: 311317    Search Time::6.594ms    
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    2SB649 2SB649A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sb649 2sb649A
OCR Text ... C = -500 mA*2 I C = -500 mA, I b = -50 mA VCE = -5 V, I C = -150 mA VCE = -5 V, I C = -150 mA VCb = -10 V, IE = 0, f = 1 MHz Min Typ ...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial<br>
File Size 34.81K  /  8 Page

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    2SB709A 2SD601A

PANASONIC[Panasonic Semiconductor]
Part No. 2sb709A 2sD601A
OCR Text ... -60 VCE=-5V Ta=25C IC -- I b Collector power dissipation PC (mW) Collector current IC (mA) 160 -80 Ib=-300A -60 -250A -200A...s) 3 10 2 1 3 0 0.01 0.03 0.1 0.3 1 3 10 0 0.1 0.3 1 3 ...
Description silicon PNP epitaxial planer type<br>
File Size 47.56K  /  3 Page

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    2SB710 2SB710A 2SB0710 2SB0710A

PANASONIC[Panasonic Semiconductor]
Part No. 2sb710 2sb710A 2sb0710 2sb0710A
OCR Text ...CE Ta = 25C -800 -700 IC I b VCE = -10 V Ta = 25C Collector power dissipation PC (mW) 200 -1 000 Collector current IC (mA) 160 -800 Ib = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA 120 -600 ...
Description silicon PNP epitaxial planar type<br>
File Size 76.25K  /  3 Page

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    2SB727 2SB727K

HITACHI[Hitachi Semiconductor]
Part No. 2sb727 2sb727K
OCR Text ... -3 -1.0 VbE (sat) l C/l b = 200 1,000 00 l C/l b = 1,0 200 VCE (sat) -0.3 TC = 25C -0.1 -0.1 50 0 VCC = 30 V ICC = 500 I...s 3 1.0 0.3 0.1 0.03 0.01 1 1 10 10 Time t 100 100 1,000 (s) 1,000 (ms) TC = 25C 1-1,000 ms 4 ...
Description silicon PNP Epitaxial<br>
File Size 36.22K  /  6 Page

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    2SB738 2SB739

HITACHI[Hitachi Semiconductor]
Part No. 2sb738 2sb739
OCR Text ...or output capacitance Cob Note: b 100 to 200 1. The 2sb738 and 2sb739 are grouped by h FE as follows. C 160 to 320 2 2sb738, 2sb739...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Transistor<br>silicon PNP Epitaxial<br>
File Size 30.61K  /  6 Page

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    2SB740

HITACHI[Hitachi Semiconductor]
Part No. 2sb740
OCR Text ...lector output capacitance Note: b 100 to 200 symbol V(bR)CbO V(bR)CEO V(bR)EbO I CbO I EbO hFE* 1 Min -70 -50 -6 -- -- 100 -- -- -- T...s or any third party's patent, copyright, trademark, or other intellectual property rights for infor...
Description silicon PNP Epitaxial<br>
File Size 29.39K  /  6 Page

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    2SB745 2SB745A 2SD661A 2SB0745 2SD661

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2sb745 2sb745A 2sD661A 2sb0745 2sD661
OCR Text ... VCE=-5V Ta=25C -140 IC -- I b Collector power dissipation PC (mW) 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 -300A -250A -200A -1...
Description silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, si, sMALL sIGNAL TRANsIsTOR<br>
File Size 49.87K  /  3 Page

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    2SB766 2SB766A 2SD874A 2SB0766A 2SB0766 2SD874

PANASONIC[Panasonic Semiconductor]
Part No. 2sb766 2sb766A 2sD874A 2sb0766A 2sb0766 2sD874
OCR Text ...ore, and the board A(2sb766) b(2sb766A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2sb766 2sb766A 2sb766 2sb766A (Ta=25C) symbol ICbO VCbO VCEO VEbO hFE1...
Description silicon PNP epitaxial planer type(For low-frequency output amplification)<br>
File Size 38.46K  /  2 Page

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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2sb772 b772 UTC2sb772
OCR Text ...A -Ib=8MA -Ib=7mA s/ 8 b lim 0.8 ite d io at ip ss Di -Ib=4mA -Ib=3mA 0.4 50 4 n lim -Ib=2mA -Ib=1mA 0 0 4 8 12 16 20 -50 0 50 ite d 0 0 100 -50 0 50 100 150 200 -Collector-Emitter voltage(V...
Description MEDIUM POWER LOW VOLTAGE TRANsIsTOR<br>PNP EPITAXIAL sILICON TRANsIsTOR<br>
File Size 45.29K  /  2 Page

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    2SB789 2SB789A 2SD968A 2SD968

PANASONIC[Panasonic Semiconductor]
Part No. 2sb789 2sb789A 2sD968A 2sD968
OCR Text ...-1.2 VCE=-10V Ta=25C IC -- I b Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 - 0....
Description silicon PNP epitaxial planer type(For low-frequency driver amplification)<br>
File Size 37.44K  /  2 Page

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