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    IR21271 IR21271PBF IR2127PBF IR2127S IR2127SPBF IR2128PBF IR2128SPBF IR21271SPBF IR21271S IR2128S IR2127STRPBF IR2127 IR

International Rectifier
Part No. IR21271 IR21271PBF IR2127PBF IR2127S IR2127SPBF IR2128PBF IR2128SPBF IR21271SPBF IR21271S IR2128S IR2127STRPBF IR2127 IR2127-15
OCR Text ...) Description * * * * * * avaliable in Lead-Free 12 - 20V (IR21271) 9 - 20V 250 mV or 1.8V 200 & 150 ns The IR2127/IR2128/IR21271(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch...
Description    CURRENT SENSING SINGLE CHANNEL DRIVER
SURRENT SENSING SINGLE CHANNEL DRIVER

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    1.5SMC300A 1.5SMC510A 1.5SMC350A 1.5SMC440A 1.5SMC480A 1.5SMC440CA 1.5SMC550A 1.5SMC300CA 1.5SMC530CA 1.5SMC480CA 1.5SMC

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Littelfuse, Inc.
Central Semiconductor, Corp.
Part No. 1.5SMC300A 1.5SMC510A 1.5SMC350A 1.5SMC440A 1.5SMC480A 1.5SMC440CA 1.5SMC550A 1.5SMC300CA 1.5SMC530CA 1.5SMC480CA 1.5SMC400A 1.5SMC8.2A 1.5SMC8.2CA 1.5SMC400CA 1.5SMC6.8A 1.5SMC7.5A 1.5SMC20A 1.5SMC200A 1.5SMC200CA 1.5SMC7.5CA 1.5SMC9.1CA 1.5SMC9.1A 1.5SMC47A 1.5SMC22A 1.5SMC18CA 1.5SMC220A 1.5SMC36CA 1.5SMC100CA 1.5SMC62CA 1.5SMC56CA 1.5SMC43CA 1.5SMC33A 1.5SMC540CA 1.5SMC18A 1.5SMC180A 1.5SMC20CA 1.5SMC100A 1.5SMC11CA 1.5SMC12CA 1.5SMC150A 1.5SMC120A 1.5SMC120CA 1.5SMC75CA
OCR Text ...ss, the IR limit is double. The avaliable parts are "A" type only, the parts without A (VBR is 10%) is not avaliable. w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors Ro...
Description Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors 硅雪崩二极管- 1500W的表面贴装瞬态电压Supressors
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG316/U COAX; 72" CABLE LENGTH 硅雪崩二极管- 1500W的表面贴装瞬态电压Supressors

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    A5N3200.10

AEGIS SEMICONDUTORES LTDA
Part No. A5N3200.10
OCR Text ...values To 80% V DRM, gate open. avaliable. TJ = 125 OC, Exp. To 67% V DRM, gate open. mA mA V TJ = 125OC, Rated VRRM and VDRM, gate open. TC = -40OC TC = 25 C TC = -40OC O O --- --- 100 dv/dt Critical rate-of-rise of off-state ...
Description Phase Control Thyristors

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    A5F1000.20HY

AEGIS SEMICONDUTORES LTDA
Part No. A5F1000.20HY
OCR Text ... gate open. Higher dv/dt values avaliable. tq Turn-off time IRM(REC) Recovery current ----- --135 700 --100 ------1.2 ----------425(15) A-24 15-60 ------------3.3 2.5 0.3 0.023 0.026 0.027 0.01 --O dv/dt Critical rate-of-rise...
Description Inverter Thyristors

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    A5N1000.30H A5N1000.32H

AEGIS SEMICONDUTORES LTDA
Part No. A5N1000.30H A5N1000.32H
OCR Text ... gate open. Higher dv/dt values avaliable. dv/dt Critical rate-of-rise of off- 300 state voltage --IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigge...
Description Phase Control Thyristors

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    A5N1400.20 A5N1400.22

AEGIS SEMICONDUTORES LTDA
Part No. A5N1400.20 A5N1400.22
OCR Text ... V/ms Higher dv/dt values avaliable. TJ = 125 C, Exp. To 67% VDRM , gate open. mA mA V V O O TJ = 125OC, Rated VRRM and VDRM , gate open. TC = -40 C TC = 25 C TC = -40 OC TC = 25OC TC = 25OC, Max. Value which will not trigger w...
Description Phase Control Thyristors

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    A1N16.02J A1N16.04J

AEGIS SEMICONDUTORES LTDA
Part No. A1N16.02J A1N16.04J
OCR Text ...values To 80% V DRM, gate open. avaliable. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 C, Rated VRRM and VDRM, gate open. TC = -40 OC TC = 25OC TC = -40OC +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" f...
Description Phase Control Thyristors

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    A3L70TT.04I A3L70TT.06I A3L70TT.08I A3L70TT.10I A3L70TT.12I A3L70TT.14I A3L70TT.16I A3L70TT.XXI

AEGIS SEMICONDUTORES LTDA
Part No. A3L70TT.04I A3L70TT.06I A3L70TT.08I A3L70TT.10I A3L70TT.12I A3L70TT.14I A3L70TT.16I A3L70TT.XXI
OCR Text ...00% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125 OC, Rated VRRM and VDRM, gate open. TC = -40OC TC = 25OC TC = -40OC +12V anode-to-cathode. For recommended gate drive see...
Description Thyristor-Thyristor Modules

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    A3L130TD.02H A3L130TD.04H

AEGIS SEMICONDUTORES LTDA
Part No. A3L130TD.02H A3L130TD.04H
OCR Text ...00% or lin. Higher dv/dt values avaliable. To 80% V DRM, gate open. TJ = 125 C, Exp. To 67% V DRM, gate open. TJ = 125 C, Rated VRRM and VDRM, gate open. TC = -40 C TC = 25 OC TC = -40 C O O O O O O O O V/ms +12V anode-to-cathode. Fo...
Description Diode-Thyristor Modules

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