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For 8-row Found Datasheets File :: 18433    Search Time::1.547ms    
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    Microsemi, Corp.
Part No. HY57V654020BLTC-8 HY57V654020BTC-75 HY57V654020BTC-8 HY57V654020BLTC-6 HY57V654020BTC-10 HY57V654020BTC-6 HY57V654020BTC-10S HY57V654020BLTC-10S
OCR Text ... command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in ...Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Pow...
Description x4 SDRAM
16Mx4|3.3V|4K|H|SDR SDRAM - 64M 16Mx4 | 3.3 | 4K的|魔| SDRAM的特别提款权- 64

File Size 145.54K  /  12 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 M64S20A1
OCR Text 8, -10, -12 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM PRELIMINARY Some of contents are subject to change without notice. ...Row Address Strobe : Column Address Strobe : Write Enable : Data I/O : Output Disable/ Write Mask : ...
Description From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

File Size 1,094.98K  /  48 Page

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    Amphenol, Corp.
Part No. HYM7V75A801BLTZG-8 HYM7V75A801BLTZG-10S HYM7V75A801BLTZG-10P HYM7V75A801BTZG-10S HYM7V75A801BTZG-8 HYM7V75A801BTZG-10P
OCR Text ...h and burst type - . 1, 2, 4, 8, or full page for sequential burst - . 1, 2, 4 or 8 for interleave burst progr ammable /cas laten...row address : ra0~ra11, column address : ca0~ca7 auto - precharge flag : a10 /ras row address ...
Description x72 SDRAM Module x72内存模块

File Size 304.33K  /  14 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 HYS64V16200GDL-75 HYS64V16200GDL-8 HYS64V32220GDL HYS64V32220GDL-7 HYS64V32220GDL-75 HYS64V16200GDL-7.5-D HYS64V32220GDL-7.5-D HYS64V16200GDL-7-D HYS64V32220GDL-7-D HYS64V16200GDL-7.5 HYS64V32220GDL-8-C2 HYS64V16200GDL-8-C2
OCR Text ...3 5.4 -7.5 PC133 3-3-3 133 5.4 -8 PC100 2-2-2 100 6 Units MHz ns * * * * Single +3.3V( 0.3V ) power supply Programmable CAS Late...Row Address Strobe Column Address Strobe Read / Write Input Clock Enable Clock Input DQMB0 -DQMB7 CS...
Description 144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
256MB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144

File Size 102.13K  /  16 Page

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    INFINEON[Infineon Technologies AG]
Part No. HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBDL-5-B HYS64D64020GBDL-6-B HYS64D64020GBDL-7-B
OCR Text 8-B 200- Pi n Small Outli ne Dual -In- Line Memor y Modules S O -D I M M DDR SDRAM M e m or y P r o du c t s Never stop thinkin...Row Precharge latency of 3 clocks, and JEDEC SPD code definiton version 0), and the Raw Card used fo...
Description DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based
200-Pin Small Outline Dual-In-Line Memory Modules

File Size 364.00K  /  25 Page

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    INFINEON[Infineon Technologies AG]
Part No. HYB39S64XXX0CTL-8 HYB39S64400 HYB39S64400CT-7.5 HYB39S64400CT-8 HYB39S64800CT HYB39S64800CT-7.5 HYB39S64800CT-8 HYB39S64800CTL
OCR Text ...rammable Burst Length: 1, 2, 4, 8 * Random Column Address every CLK (1-N Rule) * Single 3.3 V 0.3 V Power Supply * LVTTL Interface * Plasti...Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ DQM Data Input/O...
Description 64-MBit Synchronous DRAM

File Size 394.09K  /  52 Page

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    HYB39S16800CT-8 HYB39S16800CT-10 HYB39S16400CT-10 HYB39S16400CT-8 HYB39S16400-1 HYB39S16160CT-10 HYB39S16160CT-8

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. HYB39S16800CT-8 HYB39S16800CT-10 HYB39S16400CT-10 HYB39S16400CT-8 HYB39S16400-1 HYB39S16160CT-10 HYB39S16160CT-8
OCR Text 8/-10 * High Performance: -8 -10 100 10 7 12 8 Units MHz ns ns ns ns fCK(MAX.) tCK3 tAC3 tCK2 tAC2 125 8 6 10 6 * Multiple B...Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ DQM, LDQM, UDQM ...
Description 16 MBit Synchronous DRAM

File Size 100.35K  /  19 Page

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    ETRON[Etron Technology, Inc.]
Part No. EM637327TQ-8 EM637327 EM637327Q-5 EM637327Q-6 EM637327Q-7 EM637327Q-8 EM637327TQ-5 EM637327TQ-6 EM637327TQ-7
OCR Text ..., or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst-Read-Single-Write - Load Color or Mask reg...row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto...
Description 1Mega x 32 SGRAM

File Size 1,160.42K  /  78 Page

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    Mitsubishi Electric Corporation
Part No. MH8S64BBKG-8 MH8S64BBKG-10 MH8S64BBKG-7 MH8S64BBKG-10L MH8S64BBKG-7L
OCR Text 8,-8l,-10,-10l 536870912-bit (8388608 - word by 64-bit)synchronousdram mitsubishi lsis ( / 55 ) mitsubishi electric 21.dec.1998 preli...row addresses on this assembly a0-a11 0c 4 # column addresses on this assembly a0-a7 08 5 # module b...
Description 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM

File Size 606.17K  /  55 Page

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