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  6a 800v Datasheet PDF File

For 6a 800v Found Datasheets File :: 756    Search Time::1.469ms    
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    IDB12E12007

Infineon Technologies AG
Infineon Technologies A...
Part No. IDB12E12007
OCR Text ... 1 1.2 1.4 1.6 1.8 2 v 2.4 v f 6a 12a 24a 2007-09-01 rev.2.2 page 5 idb12e120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 100 200 300 400...
Description Fast Switching EmCon Diode

File Size 203.93K  /  8 Page

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    IRG4PH40UDPBF

International Rectifier
Part No. IRG4PH40UDPBF
OCR Text ...A I IR R M - (A ) I F = 1 6a I F = 8.0A 10 80 I F = 4 .0 A 40 0 100 d i f /d t - (A / s) 1000 1 100 di f /dt ...800v 800v 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Coll...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE

File Size 669.34K  /  11 Page

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    IRG4PH40UD IRG4PH40UD-E

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40UD IRG4PH40UD-E
OCR Text ...A I IR R M - (A ) I F = 1 6a I F = 8.0A 10 80 I F = 4 .0 A 40 0 100 d i f /d t - (A / s) 1000 1 100 1000 d...800v 800v 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Coll...
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

File Size 217.13K  /  10 Page

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    ST Microelectronics
Part No. STP7N80Z
OCR Text ...l gate charge v dd = 640v, i d =6a, v gs = 10v 43 58 nc q gs gate-source charge 12 nc q gd gate-drain charge 15 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7 w, v gs ...
Description N-Channel MOSFET

File Size 329.54K  /  11 Page

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    ST Microelectronics
Part No. STB6NC80Z-1 STB6NC80ZT4 STP6NC80ZFP
OCR Text ...al gate charge v dd =640v,i d = 6a, v gs =10v 45 nc q gs gate-source charge 12 nc q gd gate-drain charge 18 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7 w, v gs = 10v...
Description N-CHANNEL 800v 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET

File Size 516.93K  /  13 Page

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    IRG4PH50KDPBF IRG4PH50KDPBF-15

International Rectifier
Part No. IRG4PH50KDPBF IRG4PH50KDPBF-15
OCR Text ...5C T J = 25C 30 200 I F = 1 6a I F = 8 .0 A I R R M - (A ) trr - (ns) IF = 3 2 A 20 I F = 32A I F = 16 A I F = 8 .0A 100 10 0 100 d i f /dt - (A / s) 1000 0 100 di f /dt - (A / s) 1000 Fig. 14 - Ty...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
45 A, 1200 V, N-CHANNEL IGBT, TO-247AC

File Size 673.46K  /  11 Page

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    IRG4PH40KD

IRF[International Rectifier]
Part No. IRG4PH40KD
OCR Text ...A I IR R M - (A ) I F = 1 6a I F = 8.0A 10 80 I F = 4 .0 A 40 0 100 d i f /d t - (A / s) 1000 1 100 1000 d...800v 800v 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Coll...
Description 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)

File Size 214.26K  /  10 Page

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    T630W T620W

STMicroelectronics
ST Microelectronics
Part No. T630W T620W
OCR Text 6a SNUBBERLESSTM TRIAC www.DataSheet4U.com MAIN FEATURES Value 6 600 and 800 20 to 30 Unit A V mA G A2 Symbol IT(RMS) VDRM/VRRM...800v 600V 800v Sensitivity 20 mA 20 mA 30 mA 30 mA Type Snubberless Snubberless Snubberless Snubberl...
Description 6a SNUBBERLESTM TRIAC
SNUBBERLESS TRIAC

File Size 92.16K  /  5 Page

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    ST Microelectronics
Part No. STB6NC80Z
OCR Text ...al gate charge v dd =640v,i d = 6a, v gs =10v 45 nc q gs gate-source charge 12 nc q gd gate-drain charge 18 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7 w, v gs = 10v...
Description N-CHANNEL Power MOSFET

File Size 442.10K  /  13 Page

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    IRG4PH50KD IRG4PH50KD-E

IRF[International Rectifier]
Part No. IRG4PH50KD IRG4PH50KD-E
OCR Text ...T J = 125C T J = 25C I F = 1 6a I F = 8 .0 A I R R M - (A ) trr - (ns) IF = 3 2 A 20 I F = 32A I F = 16 A I F = 8 .0A 100 10 0 100 d i f /dt - (A / s) 1000 0 100 di f /dt - (A / s) 1000 Fig. 14 - Ty...
Description 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

File Size 221.27K  /  10 Page

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