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ST Microelectronics
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| Part No. |
STP7N80Z
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| OCR Text |
...l gate charge v dd = 640v, i d =6a, v gs = 10v 43 58 nc q gs gate-source charge 12 nc q gd gate-drain charge 15 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7 w, v gs ... |
| Description |
N-Channel MOSFET
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| File Size |
329.54K /
11 Page |
View
it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STB6NC80Z-1 STB6NC80ZT4 STP6NC80ZFP
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| OCR Text |
...al gate charge v dd =640v,i d = 6a, v gs =10v 45 nc q gs gate-source charge 12 nc q gd gate-drain charge 18 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7 w, v gs = 10v... |
| Description |
N-CHANNEL 800v 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
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| File Size |
516.93K /
13 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ST Microelectronics
|
| Part No. |
STB6NC80Z
|
| OCR Text |
...al gate charge v dd =640v,i d = 6a, v gs =10v 45 nc q gs gate-source charge 12 nc q gd gate-drain charge 18 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d =6a, r g =4.7 w, v gs = 10v... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
442.10K /
13 Page |
View
it Online |
Download Datasheet
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Price and Availability
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