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560v Datasheet PDF File

For 560v Found Datasheets File :: 752 Search Time::1.25ms
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				Advanced Power Electron...
Part No.	AP70SL380AJ
OCR Text	...c q gs gate-source charge v ds =560v - 8 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - nc t d(on) turn-on delay time v dd =350v - 13 - ns t r rise time i d =3.2a - 8 - ns t d(off) turn-off delay time r g =3.3 -37- ns t f fall tim...
Description	Simple Drive Requirement
File Size	103.90K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP10NK70Z
OCR Text	...pacitance v gs =0, v ds =0v to 560v 98 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =560v, i d = 9 a v gs =10v (see figure 17) 64 12 33 90 nc nc nc symbol parameter test conditions min. typ. max. unit t d...
Description	N-CHANNEL Power MOSFET
File Size	308.13K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSH6N70A
OCR Text	...30v v gs =-30v v ds =700v v ds =560v,t c =125 o c v gs =10v,i d =3a * v ds =50v,i d =3a v dd =350v,i d =6a, r g =11.5 see fig 13 v ds =560v,v gs =10v, i d =6a see fig 6 & fig 12 drain-to-source leakage current...
Description	Advanced Power MOSFET
File Size	282.51K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electron...
Part No.	AP70SL380AS
OCR Text	...c q gs gate-source charge v ds =560v - 8 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - nc t d(on) turn-on delay time v dd =350v - 13 - ns t r rise time i d =3.2a - 8 - ns t d(off) turn-off delay time r g =3.3 -37- ns t f fall tim...
Description	Fast Switching Characteristic
File Size	102.17K / 5 Page	View it Online	Download Datasheet

				HY ELECTRONIC CORP.
Part No.	HY4N70D HY4N70M
OCR Text	...gate-drain charge dynamic v ds =560v i d =4a v gs =10v nc turn-on delay time turn-on rise time ns v dd =350v i d =4a v gs =10v r g =25 w static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =2a v ds =700v v gs =0v v gs = + ...
Description	700V / 4A N-Channel Enhancement Mode MOSFET
File Size	136.93K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	P6N70A
OCR Text	...30v v gs =-30v v ds =700v v ds =560v,t c =125 o c v gs =10v,i d =3a * v ds =50v,i d =3a v dd =350v,i d =6a, r g =11.5 w see fig 13 v ds =560v,v gs =10v, i d =6a see fig 6 & fig 12 drain-to-source leakage current v gs =0v,v...
Description	Search --To SSP6N70A
File Size	263.12K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STU10NC70Z STU10NC70ZI
OCR Text	...s q g total gate charge v dd = 560v, i d = 10.6 a, v gs = 10v 72 100 nc q gs gate-source charge 19 nc q gd gate-drain charge 24 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d = ...
Description	N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH?┥II MOSFET N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET N沟道高达700V - 0.58ohm -齐纳输出高达9.4A Max220/I-Max220保护的PowerMESH⑩三MOSFET
File Size	409.14K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STW9NC70Z
OCR Text	...s q g total gate charge v dd = 560v, i d = 7.5 a, v gs = 10v 55 77 nc q gs gate-source charge 14 nc q gd gate-drain charge 21 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d = 7....
Description	N-channel MOSFET
File Size	202.61K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STU10NC70Z STU10NC70ZI
OCR Text	...ns q g total gate charge v dd = 560v, i d = 10.6 a, v gs = 10v 72 100 nc q gs gate-source charge 19 nc q gd gate-drain charge 24 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d = 10....
Description	N-Channel MOSFET
File Size	144.33K / 10 Page	View it Online	Download Datasheet

For 560v Found Datasheets File :: 752 Search Time::1.25ms
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