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				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5015BLC
OCR Text	...ps 500 32 0.150 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 32A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	POWER MOS VI 500V 32A 0.150 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	28.40K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text	...s Amps 500 30 0.160 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.47K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5016 APT5016BFLL APT5016SFLL
OCR Text	...Amps 500 30 0.160 250 1000 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.90K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text	...ps 500 26 0.170 25 250 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5018BFLL APT5018SFLL
OCR Text	...Amps 500 27 0.180 250 1000 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.84K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5018BLL APT5018SLL
OCR Text	...ts Amps 500 27 0.18 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.49K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	...ts Amps 500 26 0.20 25 250 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5...25W, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	... 500 22 0.240 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[...25W, Peak I = 22A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	... 25C) MIN TYP MAX UNIT 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0 6-2000 052-6207 Rev E Volts Collector-Emitter On Voltage (VGE = 15V...25W, L = 100H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notic...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50GF60HR
OCR Text	... 25C) MIN TYP MAX UNIT 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0 6-2000 050-5976 Rev - Volts Collector-Emitter On Voltage (VGE = 15V...25W, L = 60H, Tj = 25C See MIL-STD-750 Method 3471 The maximum current is limited by lead temperatur...
Description	Fast IGBT 600V 55A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	25.29K / 2 Page	View it Online	Download Datasheet

For 5.25w Found Datasheets File :: 3961 Search Time::0.922ms
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