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Galaxy Semi-Conductor H...
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| Part No. |
K2400G K2500G K1300G K2200G
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| OCR Text |
...enon lamp k2200g 4kv sidac 200- 400v trigger transformer 20:1 20m |? .01 | f 400v 24 vac 60 hz 50v - + 10 | f 4.7 | f 100v 4.7 k |? 1/2w 200...ms (see note a) t w 100 ms collector current r bb1 =150 |? voltage and current waveforms test circui... |
| Description |
SIDAC
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| File Size |
313.25K /
5 Page |
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Fairchild Semiconductor Corporation
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| Part No. |
FDH45N50F
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| OCR Text |
... ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 25 250 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = ...ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : 1. t ... |
| Description |
500V N-Channel MOSFET, FRFET
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| File Size |
1,087.60K /
7 Page |
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Fairchild Semiconductor Corporation
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| Part No. |
FDP20N50F
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| OCR Text |
...v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) 25 50 75 100 125... |
| Description |
N-Channel MOSFET, FRFET 500V, 20A, 0.26
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| File Size |
775.99K /
10 Page |
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it Online |
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Fairchild Semiconductor Corporation
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| Part No. |
FDPF16N50UT
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| OCR Text |
..., v gs = 0v - - 25 ? a v ds = 400v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...ms 1 ms 10 ? s dc 10 ms 100 ? s operation in this area is limited by r ds( on) * notes : 1.... |
| Description |
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| File Size |
244.60K /
9 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
APTM50SKM35TG
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| OCR Text |
...ain current v gs = 0v,v ds = 400v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 49.5a 35 39 m...ms 1 ms 100 us 100 ms 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain cur... |
| Description |
30V N-Channel PowerTrench MOSFET 99 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
282.88K /
6 Page |
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it Online |
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