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  400v ms Datasheet PDF File

For 400v ms Found Datasheets File :: 3256    Search Time::0.859ms    
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    FDH45N50F

Fairchild Semiconductor
Part No. FDH45N50F
OCR Text ... ds = 500v, v gs = 0v v ds = 400v, t c = 125 ? c -- -- -- -- 25 250 ? a ? a i gssf gate-body leakage current, forward v gs = 30v, v ds ...ms 1 ms 10 ? s dc 10 ms 100 ? s operation in this area is limited by r ds(on) notes : 1. ...
Description N-Channel UniFETTM FRFETMOSFET 500V, 45A, 120m

File Size 783.42K  /  7 Page

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    FDP18N500704

Fairchild Semiconductor
Part No. FDP18N500704
OCR Text ... 25C VDS = 500V, VGS = 0V VDS = 400v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VDS = 40V, ...ms 10 ms 100 ms DC ID, Drain Current [A] 100 s 10 1 1 ms 10 ms Operation in This Area is...
Description 500V N-Channel MOSFET

File Size 353.30K  /  10 Page

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    Galaxy Semi-Conductor H...
Part No. K2400G K2500G K1300G K2200G
OCR Text ...enon lamp k2200g 4kv sidac 200- 400v trigger transformer 20:1 20m |? .01 | f 400v 24 vac 60 hz 50v - + 10 | f 4.7 | f 100v 4.7 k |? 1/2w 200...ms (see note a) t w 100 ms collector current r bb1 =150 |? voltage and current waveforms test circui...
Description    SIDAC

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    Fairchild Semiconductor Corporation
Part No. FDH45N50F
OCR Text ... ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 25 250 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = ...ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : 1. t ...
Description 500V N-Channel MOSFET, FRFET

File Size 1,087.60K  /  7 Page

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    Fairchild Semiconductor Corporation
Part No. FDP20N50F
OCR Text ...v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) 25 50 75 100 125...
Description N-Channel MOSFET, FRFET 500V, 20A, 0.26

File Size 775.99K  /  10 Page

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    Fairchild Semiconductor Corporation
Part No. FDPF16N50UT
OCR Text ..., v gs = 0v - - 25 ? a v ds = 400v, t c = 125 o c - - 250 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...ms 1 ms 10 ? s dc 10 ms 100 ? s operation in this area is limited by r ds( on) * notes : 1....
Description
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    FDA16N50 FDA16N500706 FDA16N50F109

Fairchild Semiconductor
Part No. FDA16N50 FDA16N500706 FDA16N50F109
OCR Text ... 25C VDS = 500V, VGS = 0V VDS = 400v, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8.3A VDS = 40V...ms 10 ms 100 ms DC 15 10 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse ...
Description 500V N-Channel MOSFET

File Size 715.50K  /  9 Page

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    MAC15SD MAC15SDG MAC15SM MAC15SMG MAC15SNG MAC15S MAC15SN

ONSEMI[ON Semiconductor]
Part No. MAC15SD MAC15SDG MAC15SM MAC15SMG MAC15SNG MAC15S MAC15SN
OCR Text ...ge of Commutating Current (VD = 400v, ITM = 3.5A, Commutating dv/dt = 10Vm/sec, Gate Open, TJ = 110C, f= 500Hz, Snubber: CS = 0.01 mF, RS =1...ms, Duty Cycle 2%. (di/dt)c 8.0 10 - A/ms VTM IGT - - - IH IL - - - VGT 0.45 0.45 0.45 0.62 0.60 0....
Description Sensitive Gate Triacs Silicon Bidirectional Thyristors

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    Microsemi, Corp.
Part No. APTM50SKM35TG
OCR Text ...ain current v gs = 0v,v ds = 400v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 49.5a 35 39 m...ms 1 ms 100 us 100 ms 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain cur...
Description 30V N-Channel PowerTrench MOSFET 99 A, 500 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET

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    APTM50SKM17

Advanced Power Technology
Part No. APTM50SKM17
OCR Text ... = 0V,VDS = 500V VGS = 0V,VDS = 400v Min 500 Tj = 25C Tj = 125C Typ Max 200 1000 17 5 200 Unit V A mW V nA VGS = 10V, ID = 9...ms 10 Single pulse TJ=150C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) 10 ms 100 ms Gate Cha...
Description Buck chopper MOSFET Power Module

File Size 287.24K  /  6 Page

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For 400v ms Found Datasheets File :: 3256    Search Time::0.859ms    
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