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  40 50a Datasheet PDF File

For 40 50a Found Datasheets File :: 11285    Search Time::0.953ms    
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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...or high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM a...50a Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimi...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... Typ. --- --- Max. 0.75 40 Units C/W www.irf.com 1 02/14/02 IRF1010ES/IRF1010EL Electrical Characteristics @ TJ = 25C...50a 4.0 V VDS = VGS, ID = 250a --- S VDS = 25V, ID = 50a 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VG...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...LSE WIDTH 8 9 10 11 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction ...50a VDS = 48V VDS = 30V VDS = 12V 5000 VGS , Gate-to-Source Voltage (V) 16 C, Capacitanc...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    APTGF25H120T3G09

Microsemi Corporation
Part No. APTGF25H120T3G09
OCR Text ...voltage 1200 v t c = 25c 40 i c continuous collector current t c = 80c 25 i cm pulsed collector current t c = 25c 100 a ...50a@1150v these devices are sens itive to electrostatic discharge. p...
Description Full - Bridge NPT IGBT Power Module

File Size 223.44K  /  6 Page

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    AAT
Part No. AAT2805
OCR Text ...rrent (ma) output voltage (v) 4.40 4.44 4.48 4.52 4.56 4.60 0.1 1.0 10.0 100.0 1000.0 3.6v 3.0v 3.3v 2.7v aat2805 dual high efficiency charge pump for white led and flash applications 2805.2005.05.1.2 5 typical characteristics?flash driv...
Description Dual High Efficiency Charge Pump

File Size 578.70K  /  17 Page

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    GP30B120KD-EP

International Rectifier
Part No. GP30B120KD-EP
OCR Text ...t, typical socket mount ??? ??? 40 w t weight ??? 6 (0.21) ??? g (oz) z jc transient thermal impedance junction-to-case (fig.24) e...50a fig.12 - typ. transfer characteristics v ce =20v; tp=20s 0 25 50 75 100 125 150 175 200 225 250 ...
Description Search --To IRGP30B120KD-EP

File Size 203.70K  /  12 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... 1.6 -- 2.5 -- 3.5 -- 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C ...50a VGS = -10V, I D = -1.0A VGS = -4.5V, I D = -0.50a VDS = VGS, ID = 250a VDS = VGS, ID = -250a VDS...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    ST Microelectronics
Part No. STI50DE100
OCR Text ...oltage (i c = 0, v gs = 0 v) 40 v v sb(os) source-base voltage (i c = 0, v gs = 0 v) 12 v v gs gate-source voltage 20 v i c collector...50a i b = 10a v gs = 10v _ i c = 30a i b = 3a 1.3 1.1 v v h fe dc current gain v gs = 10v...
Description Hybrid Emitter Switched Bipolar Transistor ESBT

File Size 315.96K  /  11 Page

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    2SK3588-01L03

Fuji Electric
Part No. 2SK3588-01L03
OCR Text ...pulse test, tch=25c 024681012 0 40 80 120 160 200 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 0123...50a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 1...
Description N-CHANNEL SILICON POWER MOSFET

File Size 247.34K  /  4 Page

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    2SK3586-0103

Fuji Electric
Part No. 2SK3586-0103
OCR Text ...pulse test, tch=25c 024681012 0 40 80 120 160 200 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 0123...50a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 1...
Description N-CHANNEL SILICON POWER MOSFET

File Size 93.01K  /  4 Page

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