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ADPOW[Advanced Power Technology]
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| Part No. |
APT60D100LCT
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| OCR Text |
4
APT60D100LCT
1 2 3
1000V
2x60A
ULTRAFAST SOFT RECOVERY RECTIFIER DIODES
PRODUCT APPLICATIONS
* Parallel Diode * * * * *
-S...540V (See Figure 10) Characteristic Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ... |
| Description |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODES 1000V 2x60A
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| File Size |
62.01K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTDF430U100G
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| OCR Text |
...1 June, 2006
150 125 100 3.5 4 250
C N.m g
APTDF430U100G
LP4 Package outline (dimensions in mm)
A S P MTM
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi... |
| Description |
Single diode Power Module
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| File Size |
183.03K /
3 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
DSEK30
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| OCR Text |
...
l
l l l l
125 0.45-0.55/4-5 0.45-0.55/4-5 6
l l
International standard package JEDEC TO-247 AD Planar passivated chips Very sh...540V IF=30A IF=60A IF=30A IF=15A
50
A
40 IRM 30
TVJ=100C VR= 540V max. I F=30A I F=60A I F... |
| Description |
Common Cathode Fast Recovery Epitaxial Diode (FRED)
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| File Size |
47.12K /
2 Page |
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IXYS[IXYS Corporation]
IXYS, Corp.
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| Part No. |
DSEK60-12A
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| OCR Text |
...0 IF 40 30 20 10 0 0 1 VF 2 3 V 4
6 T =100C C VVJ= 540V R 5 4 TVJ=25C TVJ=100C TVJ=150C Qr 3 2 max. 1 0 1 10 -diF/dt 100 A/s 1000 typ. IF=30A IF=60A IF=30A IF=15A
50 A 40
IRM
TVJ=100C VR= 540V IF=30A IF=60A IF=30A IF=15A max.
3... |
| Description |
Fast Recovery Diodes
Common Cathode Fast Recovery Epitaxial Diode (FRED) 26 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247AD
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| File Size |
46.65K /
2 Page |
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it Online |
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IXYS[IXYS Corporation]
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| Part No. |
IXSH10N120AU1
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| OCR Text |
...= 20 A VCES = 1200 V VCE(sat) = 4.0 V
C
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight
T...540V
1. Switching times may increase for VCE (Clamp) > 0.8 V CES, higher T J or Rg values. 2. Dev... |
| Description |
IGBT with Diode
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| File Size |
37.32K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXSH15N120AU1
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| OCR Text |
...= 30 A VCES = 1200 V VCE(sat) = 4.0 V
TO-247AD
C
G
E
s W C C C
Features * High frequency IGBT with guaranteed Short Circui...540V
Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values. 2... |
| Description |
IGBT with Diode
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| File Size |
35.22K /
2 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXSX35N120AU1
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| OCR Text |
... specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C 8 750 15 100 4 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 5 mA,...540V
max. IF = 60A
Normalized IRM / Qr
coulombs
1.0
IRM
8 6 4 2 0 10
typ. IF = 120A... |
| Description |
High Voltage IGBT with Diode(VCES200V，VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
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| File Size |
86.77K /
5 Page |
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IXYS[IXYS Corporation]
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| Part No. |
VUE50-12NO1 VUE50
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| OCR Text |
...0 8 6
1/2
VUE 50-12NO1
4/5 6
8
10
Symbol IdAV IFSM
Test Conditions TK = 85C, module TVJ = 45C; VR = 0 TVJ = TVJM VR = 0...540V max. IF=30A IF=60A IF=30A IF=15A
IdAVM
30
20
20
20 10 0 0 1 VF 2 3 V 4 10 0 0 25 5... |
| Description |
Three Phase Rectifier Bridge
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| File Size |
73.89K /
2 Page |
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it Online |
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Price and Availability
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