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  3.9ghz Datasheet PDF File

For 3.9ghz Found Datasheets File :: 812    Search Time::3.312ms    
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    TIM7179-16UL

Toshiba Semiconductor
Part No. TIM7179-16UL
OCR Text ... CONDITIONS VDS= 10V IDSset=3.6A dB A dB % f = 7.1 to 7.9GHz add IM3 Two-Tone Test Po= 31.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) dBc A C Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELEC...
Description HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz

File Size 117.18K  /  4 Page

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    HMC713MS8 HMC713MS8E

Hittite Microwave Corporation
Part No. HMC713MS8 HMC713MS8E
OCR Text ... [1] Parameter Input Frequency 3 dB Dynamic Range 3 dB Dynamic Range Center 1 dB Dynamic Range OUT Slope OUT Intercept Variation of OUT wit...9GHz 1.9GHz 2.2GHz 2.7GHz OUT Slope vs. Frequency 20 19 SLOPE (mV/dB) 18 17 16 15 14 0 0.3 0.6 0...
Description 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz

File Size 534.14K  /  10 Page

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ...P 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text ...FP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB dB ...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.37K  /  7 Page

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ...19S BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 14 10V 5V dB 3V 2V 10 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Paramet...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text ...FP 183 RHs Q62702-F1382 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 60.49K  /  7 Page

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    Q62702-F1492 BFR182W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1492 BFR182W
OCR Text ...R 182W RGs Q62702-F1492 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 10V...
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  7 Page

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ...R 280W REs Q62702-F1494 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    Avago Technologies
Part No. MGA-25203
OCR Text ...mpatible pins for shutdown ? 3 to 5v supply ? esd protection all ports above 1000v hbm ? small size: 3 x 3 x 1 mm ? stable under ...9ghz 3x3mm wifi and wimax power amplifi er data sheet free datasheet http://www.datasheet-pdf.com/ ...
Description 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier

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    BFR280 Q62702-F1298

http://
SIEMENS[Siemens Semiconductor Group]
Part No. BFR280 Q62702-F1298
OCR Text ...FR 280 REs Q62702-F1298 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Colle...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 10V...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)

File Size 57.01K  /  7 Page

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For 3.9ghz Found Datasheets File :: 812    Search Time::3.312ms    
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