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MN6500KB 74LV259N WBN5T 382006 AD5274 2SC3803 71538 3471EUA
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  3.900v Datasheet PDF File

For 3.900v Found Datasheets File :: 1835    Search Time::0.906ms    
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    APTGT300SK170D3G

Microsemi Corporation
Part No. APTGT300SK170D3G
OCR Text ... on www.microsemi.com 2 1 5 q1 3 4 v ces = 1700v i c = 300a @ tc = 80c application ? ac and dc motor control ? switche...900v 3.5 c t d(on) turn-on delay time 280 t r rise time 80 t d(off) turn-off de...
Description    Buck Chopper Trench Field Stop IGBT Power Module

File Size 210.10K  /  5 Page

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    KSC13003H

SemiHow Co.,Ltd.
Part No. KSC13003H
OCR Text ...30v ? vbeo = 9v ? ic = 1.5a 1 2 3 ordering information ordering number package pin assignment packing 123 ksb13003h to-92 b c e ammo ksb1300...900v, vceo= 530v, ic= 1.5a characteristics symbol rating unit to-92 to-126 to-251 collector-base vol...
Description    NPN Silicon Power Transistor

File Size 217.88K  /  9 Page

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    Microsemi
Part No. APT43GA90BD30 APT43GA90SD30
OCR Text ... i c = 25a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i...
Description IGBT w/ anti-parallel diode

File Size 179.27K  /  9 Page

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    APTC90DSK12CT1G

Microsemi Corporation
Part No. APTC90DSK12CT1G
OCR Text ...of integration * * * Pins 3/4 must be shorted together Benefits * Outstanding performance at high frequency operation * Direct moun...900V VGS = 0V,VDS = 900V Min Tj = 25C Tj = 125C 2.5 Typ 500 100 3 Max 100 120 3.5 100 Un...
Description Dual buck chopper Super Junction MOSFET SiC chopper diode

File Size 218.51K  /  6 Page

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    Microsemi
Part No. APT35GA90BD15 APT35GA90SD15
OCR Text ... i c = 18a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i...
Description IGBT w/ anti-parallel diode

File Size 232.87K  /  9 Page

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    Microsemi
Part No. APT27GA90BD15 APT27GA90SD15
OCR Text ... i c = 14a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i...
Description IGBT w/ anti-parallel diode

File Size 226.56K  /  9 Page

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    Taiwan Semiconductor
Part No. TSM4N90CI TSM4N90CZ
OCR Text ...peak diode recovery dv/dt (note 3) dv/dt 4.5 v single pulse avalanche energy (note 2) e as 474 mj avalanche current (repetitive) (...900v n-channel power mosfet ...
Description Discrete Devices-MOSFET-Single N-Channel

File Size 450.47K  /  10 Page

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    APT43GA90B APT43GA90S

Microsemi Corporation
Part No. APT43GA90B APT43GA90S
OCR Text ...0V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emi...900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 25A RG = 4.73 TJ = +25C Inductive Switching...
Description High Speed PT IGBT

File Size 212.72K  /  6 Page

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    APTC90HM60T3G

Microsemi Corporation
Part No. APTC90HM60T3G
OCR Text ...level of integration 26 4 3 29 15 30 31 R1 32 16 27 * * * * 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 1...900V VGS = 0V,VDS = 900V Min Tj = 25C Tj = 125C 2.5 Typ 1000 50 3 Max 200 60 3.5 200 Uni...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 188.68K  /  5 Page

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    2SC4030

SANYO[Sanyo Semicon Device]
Part No. 2SC4030
OCR Text ...049C [2SC4030] 10.2 0.9 4.5 1.3 11.5 20.9 1.6 1.2 9.4 0.8 11.0 8.8 0.4 1 2 3 Specifications Absolu...900V, IE=0 VEB=4V, IC=0 VCE=5V, IC=2mA VCE=10V, IC=2mA IC=5mA, IB=1mA IC=5mA, IB=1mA 20 50 6 5 2 Con...
Description NPN Triple Diffused Planar Silicon Transistor 900V/50mA Switching Applications

File Size 117.54K  /  4 Page

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