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Microsemi
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| Part No. |
APT43GA90BD30 APT43GA90SD30
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| OCR Text |
... i c = 25a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
179.27K /
9 Page |
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it Online |
Download Datasheet
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Microsemi
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| Part No. |
APT35GA90BD15 APT35GA90SD15
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| OCR Text |
... i c = 18a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
232.87K /
9 Page |
View
it Online |
Download Datasheet
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Microsemi
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| Part No. |
APT27GA90BD15 APT27GA90SD15
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| OCR Text |
... i c = 14a t j = 25c 2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 900v, v ge = 0v t j = 25c 350 a t j = 125c 1500 i... |
| Description |
IGBT w/ anti-parallel diode
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| File Size |
226.56K /
9 Page |
View
it Online |
Download Datasheet
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Taiwan Semiconductor
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| Part No. |
TSM4N90CI TSM4N90CZ
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| OCR Text |
...peak diode recovery dv/dt (note 3) dv/dt 4.5 v single pulse avalanche energy (note 2) e as 474 mj avalanche current (repetitive) (...900v n-channel power mosfet ... |
| Description |
Discrete Devices-MOSFET-Single N-Channel
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| File Size |
450.47K /
10 Page |
View
it Online |
Download Datasheet
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