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25w channel Datasheet PDF File

For 25w channel Found Datasheets File :: 885 Search Time::1.719ms
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				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VFR
OCR Text	...rting T = +25C, L = 1.08mH, R = 25w, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs.
File Size	60.66K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VR
OCR Text	...rting T = +25C, L = 1.08mH, R = 25w, Peak I = 77A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs.
File Size	33.79K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text	...rting T = +25C, L = 1.34mH, R = 25w, Peak I = 67A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS
File Size	53.95K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011JLL APT8011
OCR Text	...rting T = +25C, L = 2.77mH, R = 25w, Peak I = 51A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	56.67K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011 APT8011JFLL
OCR Text	...rting T = +25C, L = 2.77mH, R = 25w, Peak I = 51A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	58.29K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JFLL
OCR Text	...rting T = +25C, L = 3.63mH, R = 25w, Peak I = 42A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	58.42K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JLL
OCR Text	...rting T = +25C, L = 3.63mH, R = 25w, Peak I = 42A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	56.73K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2FLL
OCR Text	...rting T = +25C, L = 2.37mH, R = 25w, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] 1 Repetitive Rating: Pulse width limite...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	52.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2LL
OCR Text	...rting T = +25C, L = 2.37mH, R = 25w, Peak I = 52A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-channel enhancement mode power MOSFETS.
File Size	51.58K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018 APT8018L2VR APT8018JN
OCR Text	...rting T = +25C, L = 3.46mH, R = 25w, Peak I = 43A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, ...
Description	Power MOS V is a new generation of high voltage N-channel enhancement mode power MOSFETs.
File Size	58.92K / 2 Page	View it Online	Download Datasheet

For 25w channel Found Datasheets File :: 885 Search Time::1.719ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |