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  2.30-1.30v Datasheet PDF File

For 2.30-1.30v Found Datasheets File :: 31140    Search Time::3.203ms    
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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA...30 8.9 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Thermal Resistance Symbol ...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...19 108 136 0.91 20 350 12 13.6 2.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Res...30 IRF3315 VDS RD 25 VGS RG D.U.T. + I D , Drain Current (A) 20 -VDD 10V ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for lowprofile...30 150 3.8 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...Capacitance Min. 150 --- --- 2.0 19 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.17 --- --- --- --- --- ...30 10V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ... = 75V --- ID = 25A ns --- RG = 2.5 --- RD = 3.0,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1....30 10V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...ed VDSS 30V RDS(on) max 2.8m ID 210A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC...30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source L...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...- --- --- --- --- Typ. --- 19 8.2 6.3 18 8.5 78 11.8 3.3 1990 707 50 Max. Units Conditions --- S VDS = 15V, ID = 49.6A --- ID = 24.8A --- nC...30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacita...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...ts --- V --- V/C 12.0 13.5 m 29 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 15A VG...30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capac...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...0A ns --- 21 --- RG = 1.8 --- 9.2 --- VGS = 4.5V --- 2672 --- VGS = 0V --- 1064 --- pF VDS = 16V --- 109 --- = 1.0MHz Avalanche Charact...30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...DS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 3...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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