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2-16g1b Datasheet PDF File

For 2-16g1b Found Datasheets File :: 50 Search Time::1.343ms
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					Toshiba Semiconductor
Part No.	TIM7785-45SL
OCR Text	... C/W MIN. -1.0 -5 TYP. 8000 -2.5 24 0.8 MAX. -4.0 1.2 u The information contained herein is presented only as a guide for the appl...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	495.05K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3742-30SL-34106
OCR Text	... MIN. -1.0 -5 TYP. 6300 -2.5 18 1.0 MAX. -4.0 1.3 u The information contained herein is presented only as a guide for the a...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET
File Size	499.97K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7179-12UL
OCR Text	...0 -44 TYP. MAX. 41.5 9.0 3.2 39 -47 2.6 3.8 0.6 3.0 80 CONDITIONS VDS= 10V IDSset=2.6A dB A dB % f = 7.1 to 7.9GHz ...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
File Size	117.01K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7179-16UL
OCR Text	...MIN. -1.0 -5 TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8 CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V IGS= -200A gm...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
File Size	117.18K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7179-25UL
OCR Text	...YP. MAX. 44.5 8.5 6.8 36 -47 5.2 7.6 0.6 6.0 80 CONDITIONS VDS= 10V IDSset=5.2A dB A dB % f = 7.1 to 7.9GHz add IM3 Tw...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=44.5dBm at 7.1GHz to 7.9GHz
File Size	117.53K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM7179-60SL
OCR Text	... -42 TYP. MAX. 48.0 6.5 13.2 37 -45 15.0 0.8 11.8 100 CONDITIONS VDS=10V f = 7.1 to 7.9GHz IDSset9.5A add IM3 IDS2 Tch ...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron sh...
Description	IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
File Size	106.10K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM4450-60SL TIM4450-60SL06
OCR Text	... -42 TYP. MAX. 48.0 9.5 13.2 42 -45 15.0 0.8 11.8 100 VDS= 10V f = 4.4 to 5.0GHz IDSset9.5A add IM3 Two-Tone Test Po=36...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
File Size	492.04K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3742-12UL09
OCR Text	... -44 TYP. MAX. 41.5 11.5 3.2 41 -47 2.6 3.8 0.6 3.0 80 CONDITIONS VDS= 10V IDSset=2.6A dB A dB % f = 3.7 to 4.2GHz ...16G1B) Unit in mm Gate Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron shoul...
Description	HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz
File Size	117.36K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3742-16UL
OCR Text	... -1.0 -5 TYP. MAX. 3600 -2.5 10.5 1.5 -4.0 1.8 Rth(c-c) Channel to Case u The information contained herein is presented only...16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) ...
Description	HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
File Size	44.99K / 4 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	TIM3742-30SL07
OCR Text	... C/W MIN. -1.0 -5 TYP. 6300 -2.5 18 1.0 MAX. -4.0 1.3 CONDITIONS VDS= 3V IDS= 10A VDS= 3V IDS= 100mA VDS= 3V VGS= 0V IGS= -350A Ch...16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solder...
Description	IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level
File Size	139.97K / 4 Page	View it Online	Download Datasheet

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