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ST Microelectronics
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| Part No. |
STD2NK60Z STQ2NK60ZR-AP STF2NK60Z STD2NK60Z-1
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| OCR Text |
...0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch
9/15
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 ... |
| Description |
N-CHANNEL 600V - 7.2 OHM - 1.4 A TO-220/TO-220FP/TO-92/IPAK ZENER-PROTECTED SUPERMESH™ MOSFET
From old datasheet system
N-CHANNEL MOSFET
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| File Size |
676.45K /
15 Page |
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Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
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| Part No. |
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403C-7 GM71V17403CL-5 GM71V17403CL-7 GM71V17403CL-6 GM71S17403CCL GM71V17403CCL GM71VS17403CLJ-7 GM71V17403CJ-5 GM71VS17403CJ-5
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| OCR Text |
194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Description
The GM71V(S)17403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4...8 9 10 11 12 13
19 18 17 16 15 14
8 9 10 11 12 13
19 18 17 16 15 14
(Top View)
Rev 0.1 ... |
| Description |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
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| File Size |
98.00K /
10 Page |
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Renesas Electronics Corporation
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| Part No. |
M6MGT331S8BKT M6MGB331S8BKT
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| OCR Text |
... (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
Description
The M6MGB/T331S8BKT is a Stacked ... |
| Description |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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| File Size |
125.01K /
3 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
M6MGT331S8AKT M6MGB331S8AKT
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| OCR Text |
... (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
Description
The M6MGB/T331S8AKT is a Stacked ... |
| Description |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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| File Size |
124.06K /
3 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
M6MGT331S4BKT M6MGB331S4BKT
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| OCR Text |
...T (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - MCP (micro Multi Chip Package)
Description
The M6MGB/T331S4BKT is a S... |
| Description |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
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| File Size |
167.67K /
3 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
M5M29GT320WG M5M29GB320WG
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| OCR Text |
...to change.
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29GB/T320WG
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T320WG are 3.3V-only high speed 33,554,432-bit ... |
| Description |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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| File Size |
86.05K /
3 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
M5M29GT320VP-80 M5M29GB320VP-80 M5M29VT320VP M5M29GB320VP M5M29WT320VP M5M29GT320VP M5M29VB320VP M5M29WB320VP
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| OCR Text |
194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION
The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground... |
| Description |
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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| File Size |
68.54K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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