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TY Semiconductor Co., Ltd
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| Part No. |
2SC2780
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| OCR Text |
...ed on c eramic s ubstrate of 16cm 2 0.7m m collector current collector pow er dissi pation ele ctric al characteristics t a = 25 paramet er sym bol test c onditons min typ ma x unit collector cut off current i cbo v cb =140v 0.1... |
| Description |
High Collector-emitter voltage. Complements to PNP type 2SA1173
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| File Size |
76.07K /
1 Page |
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it Online |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
2SK2110
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| OCR Text |
...ge temperature t stg -55to+150 *16cm 2 x0.7mm,ceramic substrate used drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 1.0 a gate leakage current ... |
| Description |
N-Channel MOSFET
Low on-resistance RDS(on)=1.5 MAX High switching speed Drain to source voltage VDSS 100
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| File Size |
94.81K /
1 Page |
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it Online |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
2SK2111
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| OCR Text |
...ge temperature t stg -55to+150 *16cm 2 x0.7mm,ceramic substrate used drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 1.0 a gate leakage current i... |
| Description |
N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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| File Size |
94.84K /
1 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
2SK2112
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| OCR Text |
...ge temperature t stg -55to+150 *16cm 2 x0.7mm,ceramic substrate used drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 1.0 a gate leakage current ... |
| Description |
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
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| File Size |
104.20K /
1 Page |
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it Online |
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