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  1400-2500 Datasheet PDF File

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ...0 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symb...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...0 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 P...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ...0 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay ...2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ...0 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol I...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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    APT5010LVR

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVR
OCR Text ...0 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symb...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 64.27K  /  4 Page

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    APT5012 APT5012WVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5012 APT5012WVR
OCR Text ...0 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symb...
Description POWER MOS V 500V 40A 0.120 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.40K  /  4 Page

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    HIP7010 HIP7010B HIP7010P FN3644

INTERSIL[Intersil Corporation]
Part No. HIP7010 HIP7010B HIP7010P FN3644
OCR Text ...0 1300 500 500 10 -10 10 10 850 1400 550 550 50 40 40 ns ns ns ns ns ns ns ns 450 1150 750 1225 850 1300 ns ns (See Figure 1- Figure 7) TA = -40oC to +125oC, VDD = 5VDC 10%, Unless Otherwise Specified PARAMETERS MIN 2 40 TYP 8 50 1.0 MAX 12...
Description From old datasheet system
J1850 Byte Level Interface Circuit

File Size 105.36K  /  20 Page

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    KBPC1008F KBPC1008FW KBPC1001F KBPC1001FW KBPC1004F KBPC1004FW KBPC1010F KBPC1010FW KBPC1012F KBPC1012FW KBPC1012W KBPC1

Diotec Elektronische
DIOTEC[Diotec Semiconductor]
Part No. KBPC1008F KBPC1008FW KBPC1001F KBPC1001FW KBPC1004F KBPC1004FW KBPC1010F KBPC1010FW KBPC1012F KBPC1012FW KBPC1012W KBPC1014F KBPC1014FW KBPC1014W KBPC1016F KBPC1016FW KBPC1016W KBPC1002F KBPC1002FW KBPC1006F KBPC1000F KBPC1000FW KBPC1000W KBPC1001W KBPC1002W KBPC1004W KBPC1006FW KBPC1006W KBPC1008W KBPC1010W
OCR Text ...0 100 200 400 600 800 1000 1200 1400 1600 IFRM 60 A 2) ) Valid for one branch - Gultig fur einen Bruckenzweig ) Valid, if the temperature...2500 V < 3.0 K/W 18 10% lb.in 2 10% Nm Isolation voltage terminals to case Isolationsspannung A...
Description    Silicon-Bridge Rectifiers

File Size 151.04K  /  2 Page

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    P3Z7ACT700W P2Z9ABA900W P7Z7ABB700 P7Z7ABC700 P7Z9AAA900W P7Z7ABB700W P2Z7ACB700W P2Z7ABB700W P3Z9ACT900W P1Z7AAR700W P1

Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semiconductor...
Part No. P3Z7ACT700W P2Z9ABA900W P7Z7ABB700 P7Z7ABC700 P7Z9AAA900W P7Z7ABB700W P2Z7ACB700W P2Z7ABB700W P3Z9ACT900W P1Z7AAR700W P1Z7ABR700W P1Z9AAR900W P1Z9ACR900W P1Z9ADR900V P2Z9AAA900W P2Z9ACA900W P3Z7AAT800W P3Z7ABT700W P3Z7ABT800W P3Z7ACT800W P3Z9AAT900W P3Z9ABT900W P7Z7ABC700W P7Z9AAB900W P7Z9AAC900W
OCR Text ...ge Rating 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 Voltage Code V04 V06 V08 W10 W12 W14 W16 W18 W20 W22 W24 W26...2500 0.92 0.70 1.00 3000 1.70 1.00 1.15 2500 1.50 1.00 1.15 2500 1.50 1.00 1.15 150 150 150 150 1...
Description Phase Control Modules (345-800 Amperes/400-3000 Volts) 相位控制模块45-800 Amperes/400-3000伏特

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