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  12a 600v Datasheet PDF File

For 12a 600v Found Datasheets File :: 882    Search Time::1.75ms    
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    FQP12N60C FQPF12N60C

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP12N60C FQPF12N60C
OCR Text ... TM Features * * * * * * 12a, 600v, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! GDS TO-220 FQP Se...
Description FQP12N60C/FQPF12N60C 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
FQP12N60C/FQPF12N60C
600v N-Channel Advance Q-FET C-Series

File Size 871.28K  /  10 Page

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    FQP12N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP12N60
OCR Text ... 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev....
Description 600v N-Channel MOSFET

File Size 530.72K  /  8 Page

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    FQPF12N60 FQPF12N60T

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF12N60 FQPF12N60T
OCR Text ... 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev....
Description 600v N-Channel MOSFET
600v N-Channel QFET

File Size 547.79K  /  8 Page

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    HGTG12N60B3

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG12N60B3
OCR Text ...ion Voltage VCE(SAT) IC = 12a VGE = 15V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emi...600v IC = 12a, VCE = 0.5 BVCES IC = 12a VCE = 300V VGE = 15V VGE = 20V Current Turn-On Delay Time...
Description 27A, 600v, UFS Series N-Channel IGBTs

File Size 199.68K  /  8 Page

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    HGTG12N60D1 HGTG12N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG12N60D1 HGTG12N60D1D
OCR Text 12a, 600v N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features * 12a, 600v * Latch Free Operation * Typical Fall Time <500ns * Low Conduction Loss ...
Description 12a/ 600v N-Channel IGBT with Anti-Parallel Ultrafast Diode
12a, 600v N-Channel IGBT with Anti-Parallel Ultrafast Diode

File Size 36.37K  /  6 Page

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    IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR
OCR Text ...DD A 200 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalan...
Description 600v Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600v Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600v/ Rds(on)max=2.2ohm/ Id=3.6A)
600v,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600v,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600v, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600v电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

File Size 145.74K  /  10 Page

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    IRFBC30A

International Rectifier, Corp.
Part No. IRFBC30A
OCR Text ...00 A 0 .0 1 300 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 Starting T , Junction Temperature( C) J IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximu...
Description 600v Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600v/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600v, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600v电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

File Size 99.53K  /  8 Page

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    IRFP22N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP22N60K
OCR Text ...tion Temperature ( C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS I AS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG VGS D.U.T. + V - DS Q...
Description SMPS MOSFET MOSFET的开关电

File Size 169.46K  /  8 Page

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    IRFPS40N60K

IRF[International Rectifier]
Part No. IRFPS40N60K
OCR Text ...G = 25, IAS = 38A, (See Figure 12a) ISD 38A, di/dt 224A/s, VDD V(BR)DSS, TJ 150C R is measured at TJ approximately 90C 2 www.irf.com IRFPS40N60K 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 ID...
Description 40 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
HEXFETPower MOSFET
HEXFET-R Power MOSFET

File Size 137.34K  /  8 Page

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    TF66608A TF66614A TF666 TF66606A TF66610A TF66612A

DYNEX[Dynex Semiconductor]
Part No. TF66608A TF66614A TF666 TF66606A TF66610A TF66612a
OCR Text ...0 Conditions TF666 14A TF666 12a TF666 10A TF666 08A TF666 06A VRSM = VRRM + 100V IDRM = IRRM = 35mA at VRRM or VDRM & Tvj Outline typ...600v. 2. VR 10V. 3. R.C Snubber, C = 0.22F, R = 4.7 NOTES: 1. VD 600v. 2. VR 10V. 3. R.C Snubb...
Description Fast Switching Thyristor

File Size 246.10K  /  13 Page

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