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				ETC ANACHIP[Anachip Corp]
Part No.	AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text	...30 -1 Typ. -0.037 20 36 5.5 3.5 12 8 75 40 1530 900 280 Max. 20 35 -3 -1 uA -25 100 nA nC Units V V/oC m V S ns pF Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage (Note 3) 2 ...
Description	P-Channel 30-V (D-S) MOSFET P-Channel Enhancement Mode Power MOSFET
File Size	245.21K / 6 Page	View it Online	Download Datasheet

				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835KC-TR APM4835KC-TU
OCR Text	...V, ID= -2A, VGEN= -10V, RG=6 RL=12.5 VGS =0V, VDS =-25V Frequency = 1.0MHZ 17 75 31 3800 590 250 pF 30 30 120 80 ns 19 30 -1.3 60 nC V V A V...900 Coss Crss 0 0 0 10 20 30 40 50 0 6 12 18 24 30 QG -...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				ALPHA Semiconductor Alpha Industries Inc ETC[ETC] ALPHA[Alpha Industries] Alpha Industries, Inc.
Part No.	AS1117 AS1117M1 AS1117M1-X AS1117M3 AS1117M3-X AS1117R AS1117R-X AS1117S AS1117S-X AS1117T AS1117T-X AS1117U AS1117U-X AS1117R-5V AS1117R-2.85V AS1117R-1.5V AS1117R-3.3V AS1117S-3V AS1117M1-3V AS1117U-5V AS1117T-2.5V AS1117T-2.85V AS1117M1-2.85V AS1117M1-5V AS1117M1-2.5V AS1117M3-5V AS1117S-2.5V
OCR Text	...0.05 6.00 7.00 7.00 10.00 10.00 12.00 12.00 15.00 1.10 1.15 1.20 10.00 1200 0.1 75 0.03 0.003 15 Units V 2.500 V 2.850 V 3.000 V 3.300 V 5.000 V 1.250 V % mV 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00...
Description	800mA low dropout regulator 2,5V 800mA low dropout regulator 3V 800mA low dropout regulator 1,5V 800mA low dropout regulator 5V 800mA Low Dropout Regulator SCSI-II Active Terminator AB 2C 2#16 SKT RECP 800mA low dropout regulator 2,85V 800mA low dropout regulator 3,3V
File Size	75.37K / 11 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BAT54CFILM BAT54SFILM BAT54AFILM BAT54FILM 5505 BAT54S BAT54C BAT54A BAT54 BAT54.A.C.S
OCR Text	...4 Max. 0.055 0.004 0.02 0.007 0.12 0.041 0.083 0.063 0.108 0.026 A A1 B S A1 c D e L e1 E H L S c H 0.6 typ. 0.024 typ. Ordering type BAT54FILM BAT54AFILM BAT54CFILM BAT54SFILM Marking D86 D84 D87 D88 Package...
Description	SMALL SIGNAL SCHOTTKY DIODE SMALL SIGNAL SCHOTTKY DIODE From old datasheet system
File Size	82.55K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BCM846S
OCR Text	...EB0) 300 C CB0 ( C EB0 ) 12 pF 10 EHP00361 mW C EB P tot 8 200 6 150 4 100 C CB 50 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) 0 0 20 40 60 80 100 10 3 K/W 10 3 ...
Description	NPN Silicon AF Transistor Array
File Size	183.86K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	...alues. handbook, halfpage 12 MLB809 fT (GHz) 8 V CE = 6V 3V 4 0 1 10 I C (mA) 10 2 f = 1 GHz; Tamb = 25 C. Fig.5 ...900 MHz; VCE = 6 V. f = 2 GHz; VCE = 6 V. Fig.6 Gain as a function of collector current; ty...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	...MRA672 handbook, halfpage 12 MRA673 Cre (pF) 0.4 fT (GHz) 8 VCE = 6 V VCE = 3 V 0.2 4 0 0 4 8 VCB (V) 12 0 ...900 MHz; Tamb = 25 C. 0 10 20 IC (mA) 30 Fig.7 Gain as a function of collector current. Fig.8 ...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text	...ooled Cathode dc Clamping force 12.0kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg ...900 Conduction 5 800 Effective thermal resistance Junction to case C/W Double side 0.032...
Description	Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
File Size	94.85K / 7 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text	...ooled Cathode dc Clamping force 12.0kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 11.5 150 175 13.5 o Min. dc Anode dc - Max. 0.0...
Description	Rectifier Diode
File Size	94.33K / 7 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	...ID (A) 10V 4 PD = 40W 12 5V 3 8 2 4V 4 4V 1 3.5V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSU...
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

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