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  1.80-1.88 Datasheet PDF File

For 1.80-1.88 Found Datasheets File :: 46288    Search Time::1.937ms    
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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ... M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C ...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ... seconds Max. 41 29 164 200 1.3 30 4.3 -55 to + 175 300 (1.6mm from case ) Units A W W/C V V/ns C Applicable Off Line SMPS Topol...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

File Size 123.62K  /  10 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...Typ. --- 0.50 --- --- Max. 1.7 --- 62 40 Units C/W Notes through are on page 11 www.irf.com 1 7/5/00 IRF3706/3706S/3...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...Typ. --- 0.50 --- --- Max. 1.73 --- 62 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended fo...80 41 64 43 70 62 A 248 1.3 --- 62 96 65 105 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MO...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ... Max. 30 20 90 57 360 120 3.1 0.96 -55 to + 150 Units V V A W W mW/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to...80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. ...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... Max. 20 20 110 69 440 120 3.1 0.96 -55 to + 150 Units V V A W W W/C C Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-...80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. T...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ... ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RE...80 V ID = 8 A V GS = 10 V I D =16 A V GS = 10 V Min. Typ. 12 20 32 9 13 Max. 16 28 44 Unit ns ns nC ...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-C...80 V G S = 10 V 100 120 140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , Ju...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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