0.9 1.9ghz pdf Datasheet P5 Full Text Search --- IC-ON-LINE


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0.9 1.9ghz Datasheet PDF File

For 0.9 1.9ghz Found Datasheets File :: 745 Search Time::1.562ms
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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...0 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...9 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...one) at collector currents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe ...9 8 7 3V 6 2V 5 10V 8V 5V 0.3 0.2 4 1V 3 0.1 2 1 0.0 0 2 4 6 8 V VR 11 0 0 2 4 6 8 mA IC 11 0....
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2
OCR Text	...ckage measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solde...9 64.1 -- -- -- 16.5 -- -- -- -- -- -- -- -- -- Gain[1] Output 3rd Order Intercept Point [1,2]...
Description	Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
File Size	152.86K / 20 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group]
Part No.	BFR280 Q62702-F1298
OCR Text	...one) at collector currents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe ...9.5 GHz 10V 8V 5V 7.0 3V 6.0 2V 5.0 4.0 pF 8.0 Ccb 0.30 fT 0.25 0.20 0.15 3.0 0.1...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
File Size	57.01K / 7 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXG1096FN
OCR Text	...T pin Measured with the ANT pin 0.04 20.2 36 40 -63 -70 250 -55 -60 275 -25 -25 Symbol Measurement conditions (Ta = 25C) Min. Typ. Max...9 0.1 0.08 *5.6 0.05 A 26 14 S 5.5 4.2 3.8 0.05 4.4 0.1 (1.5) (0.7) 0.5 1 0.4 0.0...
Description	Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS
File Size	120.22K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1086 BFR93A
OCR Text	... A 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff curr...9 dB 2 3.3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA)
File Size	57.66K / 7 Page	View it Online	Download Datasheet

				Hi-Sincerity Mocroelect... HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HSC5094
OCR Text	..., Ga=12dB @ VCE=2V, Ic=4.2mA, f=0.9GHz * High Power Gain: MAG=13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz Applications * Low noise and high ga...9 GHz 1.4 dB 1.6 dB 12 dB 13.5 dB 12.8 dB 13.5 dB Symbol VCEO VCBO VEBO @ IE=100uA IC PC Tj Tstg Min...
Description	NPN SILICON BIPOLAR TRANSISTOR
File Size	59.69K / 7 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio] New Japan Radio Co., Ltd.
Part No.	NJG1101F NJG1101F-C1 NJG1101F-C2 NJG1101F-C3 NJG1101F-C4 NJG1101F-C5 NJG1101F-L1 NJG1101F-L2
OCR Text	...0mA typ. 18dB typ. @f=1.5GHz (f=0.85~2.5GHz @3dB down) 40dB typ. @VCONT=+0.1~+2.0V +1.5dBm typ. @f=1.5GHz MTP6 (Mount Size: 2.8 x 2.9 x 1.2mm) F TYPE (Top View) 1 6 2 5 Pin connection 1.RFin 2.GND 3.VCONT 4.RFout & VDD 5.G...
Description	WIDE BAND AGC AMPLIFIER GaAs MMIC WIDE BAND AGC AMPLIFIER GaAs MMIC 宽频带AGC放大器，砷化镓微波单片集成电
File Size	335.51K / 15 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio] New Japan Radio Co., Ltd.
Part No.	NJG1103F1 NJG1103F1-C1 NJG1103F1-L1 NJG1103F1-L2 NJG1103F1-L3 NJG1515AVB2
OCR Text	...+25C, Zs=Zl=50) RATINGS UNITS 5.0 +10 150 -40~+85 -55~+125 V dBm mW C C nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band) (VDD=2.7V, f=1.489GHz...9+1.9001GHz f=1.89~1.92GHz 12.0 -4.5 -6.0 14.0 0.5 1.4 -0.5 -3.0 2.0 2.0 16.0 1.0 1.6 3.0 3.0 dB dB ...
Description	1.5/1.9ghz LOW NOISE AMPLIFIER GaAs MMIC TDMA ANTENNA SWITCH GaAs MMIC MB 3C 3#20 SKT PLUG
File Size	236.76K / 13 Page	View it Online	Download Datasheet

For 0.9 1.9ghz Found Datasheets File :: 745 Search Time::1.562ms
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