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SamHop Microelectronics
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| Part No. |
STS8215
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| OCR Text |
... junction-to-ambient r ja ver 2.0 www.samhop.com.tw aug,04,2011 1 details are subject to change without notice. a t a =25 c esd protected. ...75a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =1ma v... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
103.65K /
7 Page |
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Micross Components
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| Part No. |
ICE10N65
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| OCR Text |
...a 650v min r ds(on) v gs = 10v 0.35? typ q g v ds = 480v 41nc typ micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1...75a, t j = 25c - 0.63 - v gs = 10v, i d = 4.75a, t j = 150c r gs gate resistance - 5 - ? f = 1 ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
760.66K /
4 Page |
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it Online |
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Micross Components
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| Part No. |
MIMMK75T160UX
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| OCR Text |
...ev e rse v o l t a g e 160 0 v i d(a v ) a vera ge fo r w a rd curre nt t c =90c, mou d le 75 a t j = 45c, t= 10ms, 50hz,...75a -- 1.05 -- v v f f o r w ard v olt age i f = 75a, t j =125 c -- 1.0 -- v per... |
| Description |
1600V 75A thyristor Module RoHS Compliant
1600V 75A thyristor Module RoHS Compliant
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| File Size |
1,905.53K /
4 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STT01L10
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| OCR Text |
...-continuous -pulsed b a ver 1.0 www.samhop.com.tw aug,28,2013 1 details are subject to change without notice. w p d c -55 to 150 t a =25 ...75a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
124.49K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STT01L07
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| OCR Text |
...-continuous -pulsed b a ver 1.0 www.samhop.com.tw dec,19,2013 1 details are subject to change without notice. w p d c -55 to 150 t a =25 ...75a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
131.92K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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