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  0.5-18 Datasheet PDF File

For 0.5-18 Found Datasheets File :: 266619    Search Time::5.094ms    
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    2SB976

PANASONIC[Panasonic Semiconductor]
Part No. 2SB976
OCR Text ...=25C) Ratings -27 -18 -7 -8 -5 0.75 150 -55 ~ +150 Unit V V 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 5.10.2 0.45 -0.1 1.27 +0.2 2.30.2 V A A W...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

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    2SC3931

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3931
OCR Text ... 2.10.1 s Features q q q 0.425 1.250.1 0.425 Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-M...5 -25C 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 ...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)

File Size 55.77K  /  3 Page

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...IMENSIONS in millimeters 1.6 0.1 0.8 0.1 2 0.3 +0.1 -0 0.15 +0.1 -0.05 FEATURES * * * 0.5 High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) Ultra Super Mini Mo...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5005 2SC5005-T1 2SC5005NE58119

NEC Corp.
NEC[NEC]
Part No. 2SC5005 2SC5005-T1 2SC5005NE58119
OCR Text ...ENSIONS in millimeters 1.6 0.1 0.8 0.1 2 1.6 0.1 1.0 0.2+0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 FEATURES * * * High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

File Size 53.49K  /  8 Page

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    2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2

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NEC[NEC]
NEC Corp.
Part No. 2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text ... High fT * Low Cre * Low NF : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 0.5 1.6 0.1 1.0 0.2+0.1 -0 0.3 +0.1 -0 0.15 +0.1 -0.05 ...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ...High fT * Low Cre * Low NF : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 ...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...h Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (...5 65 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No....
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...h Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (...5 35 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No....
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...n * Low Voltage Operation 2.1 0.2 1.25 0.1 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION 2 3 2.0 0.2 PART NUMBER 2SC501...5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, I...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0,...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

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