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Sumida, Corp. SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28R CDRH5D18 CDRH5D28 CDRH5D28R-8R0NB CDRH5D28R-8R0NC CDRH5D18NP100NC SUMIDACORP-CDRH5D28-120NB CDRH5D28-120NC
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| OCR Text |
...
2.0MAX.
5.5
6.3 2.15 2.0 2.15
LAND PATTERNS (mm)
6.0MAX.
.6
( 4.1H - 100H )
CDRH5D28
6.0MAX.
DIMENSIONS (mm)
2....42m) 1.95 31m( 23m) 2.20 31.1m( 23m) 1.85 Rated Current (A) *4 D.C.R.() : Max.(Typ.) 18m( 13m) 24m( ... |
| Description |
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD SMD Shielded Power Inductor 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD POWER INDUCTORS
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| File Size |
93.35K /
2 Page |
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Champion Microelectronic, Corp. CHAMP[Champion Microelectronic Corp.]
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| Part No. |
CM3706IM25 CM3706 CM3706GIM25
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| OCR Text |
...tage can be regulated as low as 0.6V. The CM3706 can also run at 100% duty cycle for low dropout operation, extending battery life in portab...42M ; VOUT =3.3V. Input Capacitor Selection The input capacitor reduces the surge current drawn from... |
| Description |
1.5MHz, 600mA Synchronous Step-Down Regulator 1.5MHz的,600毫安同步降压稳压
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| File Size |
381.28K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP42AN15A0 FDB42AN15A0 FDP42AN15A0NL
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| OCR Text |
... TO-263, 1in2 copper pad area 1.0 62 43
oC/W o o
C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://... |
| Description |
Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 35A, 0.042 ohms @ Vgs = 10 V, TO-263/D2PAK Package
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| File Size |
194.45K /
11 Page |
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it Online |
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KEC Holdings KEC[KEC(Korea Electronics)]
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| Part No. |
KMB6D0DN30QA
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| OCR Text |
...H L P T
MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed... |
| Description |
Dual N-Ch Trench MOSFET 双N沟道MOSFET通道
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| File Size |
462.34K /
5 Page |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
PI3039
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| OCR Text |
...t for a given sample time) At 5.0 MHz clock frequency. Symbols Typical 192 42 38.4 5.0 170 to 200 Units elements m sec MHz pC Notes
Tint (1) fclk
(2)
@ typical 5 MHz pixel rate. See note 2. See note 2 With 570nm light source. At satu... |
| Description |
600DPI CIS Image Sensor Chip
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| File Size |
600.22K /
10 Page |
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it Online |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN3400S23RG SPN3400
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| OCR Text |
...
Typical 30 12 4.5 3.5 25 1.7 2.0 1.3 150 -55/150 90
Unit V V A A A W /W
2006/12/05 Ver.2
Page 2
SPN3400
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)
Parameter Static Drain-S... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
196.31K /
8 Page |
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it Online |
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SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4426S8TG SPN4426 SPN4426S8RG
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| OCR Text |
...it
V V A A A W /W
7.4 6.0 35 2.3 2.5 1.6 -55/150 -55/150 80
2006/10/30 Ver.1
Page 2
SPN4426
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted)
Parameter Static Drain-Source Brea... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
228.28K /
8 Page |
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it Online |
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