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  .8a Datasheet PDF File

For .8a Found Datasheets File :: 16748    Search Time::1.594ms    
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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ....3 9 (0 .4 0 9 ) 2 -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 ...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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    MTNN8453KQ8

Cystech Electonics Corp.
Part No. MTNN8453KQ8
OCR Text ... 2 bv dss 30v 30v i d 6.8a 8.9a r dson(typ.) @v gs =10v 15m 15m r dson(typ.) @v gs =4.5v 23m 23m description the mtnn8453kq8 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the ...
Description Asymmetric Dual N-Channel Enhancement Mode MOSFET

File Size 297.58K  /  10 Page

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    MTNN8452KQ8

Cystech Electonics Corp.
Part No. MTNN8452KQ8
OCR Text ...et 2 bv dss 30v 30v i d 8a 10.2a r dson(typ.) @v gs =10v 11m 11m r dson(typ.) @v gs =4.5v 18m 18m description the mtnn8452kq8 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the ...
Description Asymmetric Dual N-Channel Enhancement Mode MOSFET

File Size 295.07K  /  10 Page

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    IRF9530-220M

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF9530-220M
OCR Text ...unction to Ambient 20V -9.3A -5.8a -37A 45W 0.36W/C -55 to 150C 2.8C/W max. 80C/W max. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 I...
Description P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 18.21K  /  2 Page

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
OCR Text ... 1 0 .3 9 (0 .4 0 9 ) -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.38K  /  2 Page

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    MTNN20N03Q8

Cystech Electonics Corp.
Part No. MTNN20N03Q8
OCR Text ...-ch 2 bv dss 30v 60v i d 8a 0.115a r dson(max) 20m 5 description the mtnn20n03q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 253.57K  /  9 Page

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    CEF860LT-G

Comchip Technology
Part No. CEF860LT-G
OCR Text ...125c 600v , i r a 250 v i f = 8a v f 1.7 i f = 8a , t j = 125c v 1.5 v f 600 1.1 parameter conditions symbol min. typ . max. unit ns reverse recovery t ime i f = 1a , v r = 30v , di f /dt = -200a/ s t rr 30 nc q rr 67 ...
Description Efficient Fast Recovery Rectifiers, V<sub>RRM</sub>=600V, V<sub>R</sub>=600v, I<sub>O</sub>=8A

File Size 59.92K  /  4 Page

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