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  w 3-state Datasheet PDF File

For w 3-state Found Datasheets File :: 111352    Search Time::1.797ms    
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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX20VSJ-3
OCR Text ...RCE DRAIN Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source cur...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description MITSUBISHI Pch POwER MOSFET HIGH-SPEED SwITCHING USE

File Size 49.09K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX30KMJ-3
OCR Text ... 4.5 0.2 Unit V V A A A A A w C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source current Source ...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description MITSUBISHI Pch POwER MOSFET HIGH-SPEED SwITCHING USE

File Size 54.69K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX30SMJ-3
OCR Text ...55 ~ +150 Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source cur...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description HIGH-SPEED SwITCHING USE

File Size 69.49K  /  4 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. FX30SMJ-3
OCR Text ...55 ~ +150 Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source cur...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description Pch POwER MOSFET HIGH-SPEED SwITCHING USE 30 A, 150 V, P-CHANNEL, Si, POwER, MOSFET

File Size 74.73K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX3ASJ-3
OCR Text ...55 ~ +150 Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source cu...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description HIGH-SPEED SwITCHING USE

File Size 43.83K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX3ASJ-3
OCR Text ...55 ~ +150 Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source cu...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description MITSUBISHI Pch POwER MOSFET HIGH-SPEED SwITCHING USE

File Size 48.96K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6ASJ-3
OCR Text ...55 ~ +150 Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source cu...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description HIGH-SPEED SwITCHING USE

File Size 43.54K  /  4 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FX6ASJ-3
OCR Text ...55 ~ +150 Unit V V A A A A A w C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source cu...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description MITSUBISHI Pch POwER MOSFET HIGH-SPEED SwITCHING USE

File Size 48.70K  /  4 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FX6KMJ-3
OCR Text ... 2000 2.0 Unit V V A A A A A w C C V g Jan.1999 Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source current Source...3 HIGH-SPEED SwITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS ...
Description HIGH-SPEED SwITCHING USE

File Size 49.43K  /  4 Page

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    DCR100-3 DCR100-4 DCR100-6 DCR100-8

Dc Components
Part No. DCR100-3 DCR100-4 DCR100-6 DCR100-8
OCR Text ...te power dissipation pgm 0.1 w forward average gate power dissipation p g(av) 0.01 w reverse peak gate voltage vgrm 6.0 v operatin...3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4...
Description TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts

File Size 209.69K  /  1 Page

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