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  w 20a Datasheet PDF File

For w 20a Found Datasheets File :: 10136    Search Time::2.203ms    
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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ... -80 -20 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation ...20a, VGS = 0 I F = -20a, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ...-120 -30 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation ...20a Tc = -25 C 10 3 1 0.3 V DS = -10 V -100 25 C 0.06 75 C 0.02 0 -40 V GS = -10 V ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ...-180 -45 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation ...20a Tc = -25 C 10 3 1 0.3 0.1 -0.1 -0.3 V DS = -10 V -1 -3 -10 -30 -100 25 C 0.06 75 C 0...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ...-240 -60 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation ...20a 10 0 -40 V DS = -10 V -100 0 40 80 120 160 Case Temperature Tc (C) 0.1 -0.1 -0.3 -1 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SJ569LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ569LS
OCR Text ...50 --55 to +150 Unit V V A A w w C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source ...20a Switching Time, Sw Time -- ns 5 3 2 VDD=100V VGS=10V Drain Current, ID -- A td (of f)...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 29.35K  /  4 Page

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    2SJ590 2SJ590LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ590 2SJ590LS
OCR Text ...5 150 --55 to +150 Unit V V A A w w C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volta...20a VDS=--10V, VGS=--10V, ID=-20a VDS=--10V, VGS=--10V, ID=-20a IS=--20a, VGS=0 Ratings min typ 1700...
Description    DC / DC Converter Applications
P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 33.18K  /  4 Page

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    2SJ594 2SJ594TP-FA

SANYO[Sanyo Semicon Device]
Part No. 2SJ594 2SJ594TP-FA
OCR Text ...5 150 --55 to +150 Unit V V A A w w C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volta...20a 10s 10 0 s Gate-to-Source Voltage, VGS -- V --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 31.09K  /  4 Page

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    2SJ609

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SJ609
OCR Text ...50 --55 to +150 Unit V V A A w w C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volta...20a ID= --5A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Drain Current, ID ...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 29.93K  /  4 Page

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    2SK1190

SANKEN[Sanken electric]
Part No. 2SK1190
OCR Text ... ns (Ta = 25C) Unit V V A A w mJ C C Conditions I D = 250A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, I D = 250A VDS = 10V, I...20a, Figure Page VDS -- ID Characteristics 24 20 10V 5.5V 24 20 VGS -- ID Characteristics 50...
Description MOSFET

File Size 33.10K  /  1 Page

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    2SK1276A

FUJI[Fuji Electric]
Part No. 2SK1276A
OCR Text ...0 150 -55 ~ +150 Unit V V A A V w C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Dra...20a VGS=10V RGS=25 Tch=25C L = 100H Min. 250 2,1 Typ. 3,0 10 0,5 10 0,16 12 1100 240 130 30 5...
Description N-channel MOS-FET

File Size 200.27K  /  2 Page

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