| |
|
 |
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| Part No. |
BB405M BB405 HITACHILTD.-BB405M
|
| OCR Text |
...BB405M
Drain Current vs. Gate1 voltege 20 I D (mA) I D (mA) V DS = 5 V R G = 82 k 20 V DS = 5 V R G = 100 k Drain Current vs. Gate1 voltege
16
16
12 3V
4V
12 4V 8 3V 2V V G2S = 1 V
Drain Current
8
2V 4 V G2S = 1 V... |
| Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
| File Size |
58.46K /
10 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Hitachi
|
| Part No. |
HL6339G
|
| OCR Text |
...gment 0 0.5 1.5 2.5 1 2 Applied voltege (kV) 3
60 40 20 0 Forward (C : 100pF, R : 1.5k) N = 10pcs IO 10% judgment 0 200 400 Applied voltege (V) 600
Rev.1, Apr. 2002, page 5 of 8
HL6339G/42G
Package Dimensions
As of January, 2002... |
| Description |
(HL6342G) 633nm Lasing Laser Diode
|
| File Size |
41.93K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| Part No. |
BB304C
|
| OCR Text |
...BB304C
Drain Current vs. Gate1 voltege 25 I D (mA) I D (mA) V DS = 9 V R G = 470 k 25 V DS = 9 V R G = 560 k Drain Current vs. Gate1 voltege
20
20
15
Drain Current
10
Drain Current
6V 5V 4V 3V 2V
15
10
6V 5V... |
| Description |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
| File Size |
66.64K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| Part No. |
BB302M
|
| OCR Text |
...BB302M
Drain Current vs. Gate1 voltege 20 I D (mA) I D (mA) V DS = 9 V R G = 120 k 6V 5V 4V 20 V DS = 9 V R G = 150 k 16 6V 5V 4V 3V 2V V G2S = 1 V Drain Current vs. Gate1 voltege
16
12
12
Drain Current
8 2V 4
3V
Dra... |
| Description |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
| File Size |
60.66K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| Part No. |
BB302C
|
| OCR Text |
...BB302C
Drain Current vs. Gate1 voltege 20 I D (mA) I D (mA) V DS = 9 V R G = 120 k 6V 5V 4V 20 V DS = 9 V R G = 150 k 16 6V 5V 4V 3V 2V V G2S = 1 V Drain Current vs. Gate1 voltege
16
12
12
Drain Current
8 2V 4
3V
Dra... |
| Description |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
| File Size |
57.12K /
11 Page |
View
it Online |
Download Datasheet |
| |
|
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| Part No. |
BB301C BB301
|
| OCR Text |
...BB301C
Drain Current vs. Gate1 voltege 20 VDS = 5 V RG = 100 k Drain Current ID (mA) 20 VDS = 5 V RG = 150 k 16 Drain Current vs. Gate1 voltege
16 Drain Current ID (mA)
12
12 4V 3V
4
V
8
3
V
2V
8
4 VG2S = 1... |
| Description |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
| File Size |
45.08K /
10 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
